2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)最新文献_第4页

Prevent Auger Analysis Misjudgment on Bond Pad Surface Element Concentration in the SPC Method 防止SPC法对键垫表面元素浓度的螺旋钻分析误判

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452546

Sheng-Min Chen, C. Tseng, Kuan-Chieh Huang

引用次数: 0

Nano C-V imaging of Semiconductor Devices with Scanning Microwave Impedance Microscopy 用扫描微波阻抗显微镜对半导体器件进行纳米C-V成像

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452492

O. Amster, K. Rubin, Yongliang Yang, D. Iyer, A. Messinger, R. Crowder

引用次数: 0

Integrating EOP/EOFM as a Complimentary Localization Technique for Open Via/Contact 集成EOP/EOFM作为开放通孔/触点的互补定位技术

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452501

Nutthapon Jandee, Damrong Korbsrisawat, Ferdie Paulino

引用次数: 0

Failure Analysis of Damages on Advanced Technologies Induced by Picosecond Pulsed Laser During Space Radiation SEE Testing 空间辐射SEE测试中皮秒脉冲激光损伤先进技术的失效分析

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452544

C. T. Chua, Q. Liu, S. Chef, K. Sanchez, P. Pcrdu, C. Gan

{"title":"Failure Analysis of Damages on Advanced Technologies Induced by Picosecond Pulsed Laser During Space Radiation SEE Testing","authors":"C. T. Chua, Q. Liu, S. Chef, K. Sanchez, P. Pcrdu, C. Gan","doi":"10.1109/IPFA.2018.8452544","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452544","url":null,"abstract":"Picosecond pulsed laser, customarily perceived to offer advantages of flexibility and ease of testing over heavy ion particle accelerator test, was conducted on a chain of inverters during Single Event Effect (SEE) evaluation. In this paper, we report on the unexpected permanent damage induced by 1064 nm pulsed laser on test structures fabricated with 65 nm bulk CMOS process technology. Light emission microscopy (EMMI) localized hotspots within the area previously scanned by the pulsed laser. Electro Optical Frequency Mapping (EOFM) verified the undesired termination of signal propagation along the chain of inverters while Electro Optical Probing (EOP) confirmed the unexpected phase change and eventual loss of the output signal waveform. Focused Ion Beam (FIB), Transmission Microscopy (TEM) and Energy Dispersive X-ray spectroscopy (EDX) confirmed the physical failure and identified nickel as the diffusing species. This paper aims to advise caution to the research communities (both space radiation and optical failure analysis) in employing similar laser test technique and highlights the need to define the safe operating region of such technique, especially for emerging technology nodes.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134108362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The OTP Data Retention Improvement on CESL and SAB Film Scheme 基于CESL和SAB薄膜方案的OTP数据保留改进

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452494

B. Tsai, S. J. Chang, C. S.Ho, K. Chou, I. Wei, P. Tseng

引用次数: 1

SEM-Based Nanoprobing on In-Situ Delayered Advanced 10 nm Technology Node IC 基于sem的原位延迟先进10nm技术节点IC纳米探测

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452498

Marek Sikul, K. Novotný, M. Kemmler, A. Rummel

引用次数: 6

Failure Analysis and Improvement of Bandgap Start-up Circuit by FIB 带隙启动电路FIB失效分析及改进

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452593

Qu Ruoyuan, Sun Jiajia, Z. Wei, Gong Xin

引用次数: 0

Laser Assisted Device Alteration, Efficient Application for Soft Failure Localization on Advanced Node 激光辅助设备改造，先进节点软故障定位的有效应用

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452489

Kuang Yuan Chao, Jeng Hung Pan, H. Chou, Shih Yuan Liu Chong, J. C. Chang, J. Lin, Chee Hong

引用次数: 1

Theoretical Study of Ag Interactions in Amorphous Silica RRAM Devices 非晶硅RRAM器件中Ag相互作用的理论研究

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452536

K. Patel, J. Cottom, M. Bosman, A. Kenyon, A. Shluger

{"title":"Theoretical Study of Ag Interactions in Amorphous Silica RRAM Devices","authors":"K. Patel, J. Cottom, M. Bosman, A. Kenyon, A. Shluger","doi":"10.1109/IPFA.2018.8452536","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452536","url":null,"abstract":"In this study, Density Functional Theory (DFT) calculations were used to model the incorporation and diffusion of Ag in Ag/a-Si02/Pt resistive random-access memory (RRAM) devices. The Ag clustering mechanism is vital for understanding device operation and at this stage is unknown. In this paper an O vacancy (Vo) mediated cluster model is presented, where the Vo is identified as the principle site for $mathrm{Ag}^{+}$ reduction. The $mathrm{Ag}^{+}$ interstitial is energetically favored at the Fermi energies of Ag and Pt, indicating that $mathrm{Ag}^{+}$ ions are not reduced at the Pt electrode via electron tunneling. Instead, $mathrm{Ag}^{+}$ ions bind to Vo forming the $[mathrm{Ag}/mathrm{Vo}]^{+}$ complex, reducing $mathrm{Ag}^{+}$ via charge transfer from the Si atoms in the vacancy. The $[mathrm{Ag}/mathrm{Vo}]^{+}$ complex is then able to trap an electron forming $[mathrm{Ag}/mathrm{Vo}]^{0}$ at the Fermi energy of Pt. This complex is then able to act as a nucleation site for of Ag clustering with the formation of $[mathrm{Ag}2/mathrm{Vo}]^{+}$ which is reduced by the above mechanism.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126841071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Detection and Fault Isolation of Elevated Resistive Paths in Copper Pillar (CuP) Flip Chip Package Device 铜柱(CuP)倒装芯片封装器件中高阻路径的检测与故障隔离

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452537

C. Ison, R. Spurrier, M. Somintac, R. Asuncion

{"title":"Detection and Fault Isolation of Elevated Resistive Paths in Copper Pillar (CuP) Flip Chip Package Device","authors":"C. Ison, R. Spurrier, M. Somintac, R. Asuncion","doi":"10.1109/IPFA.2018.8452537","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452537","url":null,"abstract":"The demand for higher input/output (I/O) capability, smaller package footprint, low cost, combined with good electrical properties and better electromigration performance has made the copper pillar (CuP) bump an excellent first-level interconnect in flip chip devices built in the recent years. The ability to successfully qualify a new package technology, for this case, CuP flip chip, is dependent on a robust package design, an optimal and stable assembly process, a comprehensive stress plan, and of equal importance, is the development of an electrical test methodology that can detect issues exacerbated by the stress, as well as, the availability of fault isolation methods to rootcause these failures. In this paper, we present the detection of both intrinsic and extrinsic CuP bump interconnect reliability issues exacerbated by temperature cycling through the boundary scan test. The CuP flip chip package-designed electrical and physical failure analyses (FA) used to rootcause the failures were presented. Assembly process improvements to address the root cause of the extrinsic failure modes, as well as interconnect design improvements, to eliminate the contribution of the manufacturing process/package design to the intrinsic failure mechanisms reliability testing aims to expose, were also discussed.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126426681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0