2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)最新文献_第10页

The Application of Advanced Nano-Techniques in Failure Analysis for Different Failure Mechanism 先进纳米技术在不同失效机理失效分析中的应用

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452560

Li Tian, Kuibo Lan, Binghai Liu, Jing-Jing Li, Y. Che, Gaojie Wen, Jinrong Song

{"title":"The Application of Advanced Nano-Techniques in Failure Analysis for Different Failure Mechanism","authors":"Li Tian, Kuibo Lan, Binghai Liu, Jing-Jing Li, Y. Che, Gaojie Wen, Jinrong Song","doi":"10.1109/IPFA.2018.8452560","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452560","url":null,"abstract":"With multi-metal layers and scaling down we occurred many difficulties in FA (Failure Analysis). Failure isolation for FA has more challenge with smaller defects and process changes. Conventional FA techniques couldn't meet need of analysis, so the advanced nano-techniques must be developed and applied in FA [1]-[2]. By characterizing the electrical behavior on devices, these FA techniques (for example nanoprobing, EBAC, C-AFM, etc) precisely locates defects before any PF A is performed and allows for deeper understanding of the root cause. Nanoprobing are commonly utilized to measure electrical characterization with nanoscale area and under-layer circuit in F A lab. EBAC applications are to locate the high resistance, open circuit of interconnection, the connected path of a circuit, etc. The main application of Conductive Atomic Force Microscope (C-AFM) for high/low resistance and junction leakages differentiation had proven to be very useful in determining the failure mechanism. In this paper, the principle of advanced FA nano-techniques were introduced simply. Then three real cases with different failure mechanism were shared with applying these nano-techniques. In first case nanoprobing help to confirm resistive/open failure; in second case EBAC analysis revealed short failure between adjacent metal lines; in third case C-AFM technique was applied to find out implant/crystal defect which caused timing delay failure.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116212567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reliability Assessment of 10nm FinFET Process Technology 10nm FinFET工艺技术的可靠性评估

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452491

J. Kim, M. Jin, H. Sagong, S. Pae

引用次数: 5

Study of Phase Shift of Lock-In Thermography and Its Application in 2.5D IC Package 锁相热成像相移研究及其在2.5D IC封装中的应用

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452594

Yu-Ting Lin, B. Lai, C. Tsao, Yi-Sheng Lin, Yu-Hsiang Hsiao

引用次数: 0

Achieving Simplified Biasing Conditions with Pin Reduction Approach to enhance Static Fault Localization Capability 用引脚缩减法实现简化偏置条件，提高静态故障定位能力

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452583

S. Moon, A. Quah, D. Nagalingam, K. H. Yip, C.Q. Chen, Y. Tam, P. T. Ng, H. Ng, G. Ang, J. Lam, Z. Mai

{"title":"Achieving Simplified Biasing Conditions with Pin Reduction Approach to enhance Static Fault Localization Capability","authors":"S. Moon, A. Quah, D. Nagalingam, K. H. Yip, C.Q. Chen, Y. Tam, P. T. Ng, H. Ng, G. Ang, J. Lam, Z. Mai","doi":"10.1109/IPFA.2018.8452583","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452583","url":null,"abstract":"Successful fault localization is heavily dependent on the ability to replicate the failure mode in the analytical scanning optical microscope (SOM) system for defect isolation. However, typical SOM configuration with confined stage space is limited to about 4 probes – 4 SMUs resources for bench measurement. This has impeded the successful debug of functional IDDQ/powerdown leakage failure which may require higher pin counts to enter into leakage mode. In this paper, the static fault localization capability of such failures is enhanced with an engineering approach to simplify the biasing conditions for static debug within the SOM system with limited test resources. This is especially useful in a foundry environment that manufactures a wide variety of products from differentiated process lines. Several case studies were described to demonstrate how this optimized electrical FA flow was applied with great success to debug multiple challenging low yield functional leakage issues.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124617930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Impact of Film Deposition Temperature and Bottom Liner on the Hardness and Grain Size of Al Films Investigated Using Nanoindentation and SEM Techniques 利用纳米压痕和扫描电镜技术研究了沉积温度和衬底对铝膜硬度和晶粒尺寸的影响

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452521

Xiaoxuan Li, Xintong Zru, Mei Zhen Ng, R. R. Nistala, Z. Mo, C. Seet

引用次数: 1

Through-Transmission Scanning Acoustic Tomography Using Capacitive Micromachined Ultrasound Transducer 电容式微机械超声换能器的透传扫描声层析成像

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452178

T. Takezaki, M. Kawano, S. Machida, D. Ryuzaki

引用次数: 6

Problems of and Solutions for Coating Techniques for TEM Sample Preparation on Ultra Low-k Dielectric Devices after Progressive-FIB Cross-section Analysis 逐级fib分析超低k介电器件TEM样品制备涂层技术存在的问题及解决方法

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452598

Yanlin Pan, Yuzhe Zhao, P. K. Tan, Z. Mai, F. Rival, J. Lam

{"title":"Problems of and Solutions for Coating Techniques for TEM Sample Preparation on Ultra Low-k Dielectric Devices after Progressive-FIB Cross-section Analysis","authors":"Yanlin Pan, Yuzhe Zhao, P. K. Tan, Z. Mai, F. Rival, J. Lam","doi":"10.1109/IPFA.2018.8452598","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452598","url":null,"abstract":"This paper presents the impact of coating techniques for TEM sample preparation on ultra low-k dielectric devices after progressive-FIB cross-section analysis. The ultra low-k materials used as inter-metal dielectrics (IMD) has a k value less than 2.6. In the experimental study on three commonly used protective coatings (sputtered Pt, e-beam deposited insulator and PECVD oxide) for the 28 nm technology node with ultra low-k IMD, PECVD oxide coating was found to be an ideal choice for the TEM sample preparation with the least low-k dielectric deformation or damage. In-situ e-beam deposited insulator in a dual-beam FIB tool equipped with a GIS for insulator deposition is a convenient and commonly used method. However, the e-beam can introduce a considerable damage to the ultra low-k IMD during the e-beam deposition. Sputtered Pt can achieve a damage-free profile of an ultra low-k IMD, but we have to sacrifice certain portion of the target area in the final FIB cleaning process during TEM sample preparation. This makes sputtered Pt not suitable for the TEM sample preparation on a defect with a small size (<100 nm).","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133492179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Electrical Diagnosis of 7 Series FPGAs Read Sequence Dependent Bram Failure Using Pattern Analysis 基于模式分析的7系列fpga读序列相关故障电气诊断

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452179

Xin Li, Jing Yang, P. Salinas

引用次数: 0

Soft Defect Analysis on Advanced Logic Integrated Circuit by Dynamic Laser Stimulation 先进逻辑集成电路的动态激光软缺陷分析

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452488

Beomjun Kim, Juhyun Kim, Wookhyun Cho, Seongjun Cho, Seok-jun Won, Jinsung Kim

引用次数: 0

Failure Analysis of Multilayer-Metal-Packaged Power Devices for Abnormal Thermal Response 多层金属封装电源器件异常热响应失效分析

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452554

Yulong Zhang, Lulu Wang, Bo Gao, Lixin Wang, Jiajun Luo

引用次数: 0