SEM-Based Nanoprobing on In-Situ Delayered Advanced 10 nm Technology Node IC

Marek Sikul, K. Novotný, M. Kemmler, A. Rummel
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引用次数: 6

Abstract

Following the trend of continuous structure downsizing, it is becoming increasingly challenging to perform standard failure analyses. For instance, nanoprobing on sub-14 nm technology nodes requires well-prepared samples, ultra-sharp tips and especially thermal and mechanical stability. Moreover, standard mechanical polishing starts to fail on lower metal layers due to their very small thickness. In this paper we propose a method of site-specific gas-assisted homogeneous delayering followed by in-situ nanoprobing measurement in a single FIB/SEM system.
基于sem的原位延迟先进10nm技术节点IC纳米探测
随着结构不断小型化的趋势,进行标准的失效分析变得越来越具有挑战性。例如,在14nm以下的技术节点上进行纳米探测需要精心准备的样品、超锋利的尖端,尤其是热稳定性和机械稳定性。此外,由于金属层的厚度非常小,标准的机械抛光在较低的金属层上开始失效。在本文中,我们提出了一种在单一FIB/SEM系统中进行现场纳米探针测量的特定位置气体辅助均匀脱层方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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