基于CESL和SAB薄膜方案的OTP数据保留改进

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI:10.1109/IPFA.2018.8452494

B. Tsai, S. J. Chang, C. S.Ho, K. Chou, I. Wei, P. Tseng

{"title":"基于CESL和SAB薄膜方案的OTP数据保留改进","authors":"B. Tsai, S. J. Chang, C. S.Ho, K. Chou, I. Wei, P. Tseng","doi":"10.1109/IPFA.2018.8452494","DOIUrl":null,"url":null,"abstract":"The effects of silicide-blocked (SAB) oxide and contact etch stop layer (CESL) on the retention characteristic of one-time programming (OTP) nonvolatile memory (NVM) are experimentally evaluated through various deposition process conditions. The OTP retention is characterized after a baking condition of 250°C for 4 hrs. Our results suggest the NH3 and SiH4gas base deposition process effectively make improvements on OTP data retention. And the thicker the SAB film, the better the data retention.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The OTP Data Retention Improvement on CESL and SAB Film Scheme\",\"authors\":\"B. Tsai, S. J. Chang, C. S.Ho, K. Chou, I. Wei, P. Tseng\",\"doi\":\"10.1109/IPFA.2018.8452494\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of silicide-blocked (SAB) oxide and contact etch stop layer (CESL) on the retention characteristic of one-time programming (OTP) nonvolatile memory (NVM) are experimentally evaluated through various deposition process conditions. The OTP retention is characterized after a baking condition of 250°C for 4 hrs. Our results suggest the NH3 and SiH4gas base deposition process effectively make improvements on OTP data retention. And the thicker the SAB film, the better the data retention.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452494\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452494","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

通过不同的沉积工艺条件，实验评价了硅化物阻塞(SAB)氧化物和接触蚀刻停止层(CESL)对一次性编程(OTP)非易失性存储器(NVM)保留特性的影响。在250℃烘烤4小时后，对OTP的保留进行了表征。我们的研究结果表明，NH3和sih4气基沉积工艺有效地改善了OTP数据的保留。SAB膜越厚，数据保留效果越好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The OTP Data Retention Improvement on CESL and SAB Film Scheme

The effects of silicide-blocked (SAB) oxide and contact etch stop layer (CESL) on the retention characteristic of one-time programming (OTP) nonvolatile memory (NVM) are experimentally evaluated through various deposition process conditions. The OTP retention is characterized after a baking condition of 250°C for 4 hrs. Our results suggest the NH3 and SiH4gas base deposition process effectively make improvements on OTP data retention. And the thicker the SAB film, the better the data retention.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

自引率

0.00%

发文量