FBGA 28nm扫描链失效分析

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI:10.1109/IPFA.2018.8452562

Liew Chiun Ning, L. K. Heng, Ng Yi Jie, Goh Lay Lay, Lee Chong Haw, Loo Huey Wen

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引用次数: 0

摘要

集成电路(ic)制造中采用的工艺节点技术的持续小型化提高了芯片的性能，但同时也引起了细微的缺陷。因此，失效分析(FA)对晶圆厂工艺改进的根本原因分析变得越来越重要。本文采用聚焦离子束(FIB)电路编辑、红外发射显微镜(IREM)、广泛的布局研究、纳米探针、电子束吸收电流(EBAC)、透射电子显微镜(TEM)和能量色散x射线(EDX)进行缺陷定位，提出了一种新的扫描链功能失效分析方法。

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FBGA 28nm Scan Chain Failure Analysis

Ongoing miniaturization in process node technology used in fabricating integrated circuits (ICs) has enhanced chip performance but at the same time this has induced subtle defects. As a result, Failure Analysis (FA) has become increasingly important for root cause analysis to enable wafer fab process improvement. This paper presents a novel FA approach on real case Scan Chain functional failure induced in fabrication process by incorporating Focused Ion Beam (FIB) circuit edit, Infrared Emission Microscopy (IREM), extensive layout study, Nanoprobing, Electron Beam Absorbed Current (EBAC), Transmission Electron Microscopy (TEM) and Energy Dispersive X-ray (EDX) for defect localization.

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2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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