Application of EOFM to Localize the Metal and Poly-Si Short

Abstract

Electro Optical Frequency Mapping is a well-known dynamic fault isolation techniques which is capable of mapping and extracting information of switching transistors from the active area. However, this paper will present a case study of the capability of EOFM to detect the fault location at non-active area (Metal and Polysilicon line). The paper will describe how EOFM can help to localize the Metal and Polysilicon short. Content in this paper provides a useful information and a methodology to localize a short defect in non-active area which relates with thermo-reflectance effects.