2022 Compound Semiconductor Week (CSW)最新文献_第7页

Multiphysics Characterizations of Vertical GaN Schottky Diodes 垂直GaN肖特基二极管的多物理场特性

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI: 10.1109/CSW55288.2022.9930447

Atse Julien Eric N'Dohi, C. Sonneville, Soufiane Saidi, T. Ngo, P. de Mierry, É. Frayssinet, Y. Cordier, L. Phung, F. Morancho, K. Isoird, J. Tasselli, H. Maher, D. Planson

引用次数: 0

Design and Optimization of New Enhanced Vertical GaN Nanowire Transistor Using Sentaurus TCAD for Power Applications 基于Sentaurus TCAD的新型增强型垂直GaN纳米线晶体管的设计与优化

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI: 10.1109/CSW55288.2022.9930376

M. Benjelloun, Nedal Al Taradeh, C. Rodriguez, N. Gogneau, A. Soltani, D. Morris, J. Harmand, H. Maher

{"title":"Design and Optimization of New Enhanced Vertical GaN Nanowire Transistor Using Sentaurus TCAD for Power Applications","authors":"M. Benjelloun, Nedal Al Taradeh, C. Rodriguez, N. Gogneau, A. Soltani, D. Morris, J. Harmand, H. Maher","doi":"10.1109/CSW55288.2022.9930376","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930376","url":null,"abstract":"A novel enhanced vertical GaN nanowire transistor structure is designed and optimized using the TCAD tool. The impact of the diameter, length, and doping concentration has been analyzed for the channel and drift region parts with and without surface traps. For the channel region, it has been observed that the device is Normally-OFF when the nanowire’s diameter and channel doping are less than 200 nm and 1×1017 cm−3, respectively. When considering a density of acceptor-type surface traps of 1×1013 cm−2.eV−1, the threshold voltage (Vth) has slightly increased. The breakdown voltage (VBR) of the device is found to increase as the length of the drift region increases and as the diameter of the nanowire decreases. Our simulation results show that the on-state resistance (RON) of the device increases drastically at low doping level of the drift region, when surface traps are taken into account. The threshold value of the doping level, above which RON remains small and insensitive to surface traps, increases as the nanowire diameter decreases.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126438976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermodynamics and Band Structure of ScxAl1-xN ScxAl1-xN的热力学和能带结构

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI: 10.1109/csw55288.2022.9930119

Mahlet Molla, E. Kioupakis

引用次数: 0

Green Light Emitting Diodes for the Ultimate Solid-State Lighting 绿色发光二极管的终极固态照明

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI: 10.1109/CSW55288.2022.9930416

J. Lee, Y. Tsai, C. Bayram

引用次数: 0

Techniques for reduction of threading dislocations in metamorphic growth of GaSb on GaAs for realization of high mobility n and p channels 为实现高迁移率n和p通道而减少GaAs上GaSb变质生长中螺纹位错的技术

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI: 10.1109/CSW55288.2022.9930421

F. F. Ince, A. T. Newell, K. Reilly, S. Seth, T. Rotter, A. Mansoori, D. Shima, P. Webster, E. Vaughan, G. Balakrishnan

引用次数: 0

MOCVD Growth of InxSey Monolayers InxSey单层膜的MOCVD生长

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI: 10.1109/CSW55288.2022.9930451

R. Günkel, J. Glowatzki, S. Patil, O. Maßmeyer, S. Chatterjee, A. Beyer, W. Stolz, K. Volz

引用次数: 0

First Demonstration of 500 °C Operation of β-Ga2O3 MOSFET in Air β-Ga2O3 MOSFET在空气中500°C工作的首次演示

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI: 10.1109/CSW55288.2022.9930389

N. Sepelak, Jeremiah D. Williams, D. Dryden, Rachel Kahler, K. Liddy, Weisong Wang, K. Chabak, A. Green, A. Islam

{"title":"First Demonstration of 500 °C Operation of β-Ga2O3 MOSFET in Air","authors":"N. Sepelak, Jeremiah D. Williams, D. Dryden, Rachel Kahler, K. Liddy, Weisong Wang, K. Chabak, A. Green, A. Islam","doi":"10.1109/CSW55288.2022.9930389","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930389","url":null,"abstract":"β-Ga<inf>2</inf>O<inf>3</inf> offers a robust platform for operation of electronic devices at high temperature and in extreme environments due to its large band gap of ~4.8 eV and low intrinsic carrier concentration. In this study, we characterize β-Ga<inf>2</inf>O<inf>3</inf> field effect transistors from room temperature (RT) up to 500 °C. The devices, fabricated with Ni/Au gate metal and Al<inf>2</inf>O<inf>3</inf> gate dielectric, exhibited stable operation up to 500 °C. The measured I<inf>D</inf>-V<inf>D</inf> characteristics showed no current degradation up to 450 °C; in fact, current improved in this temperature range due to activation carriers from dopants/traps in the device. At 500 °C, device exhibited a drop in I<inf>D</inf>; however, device characteristics are recovered once the device is brought back to RT even after 20 hours of device operation at 500 °C. All other device characteristics (gate leakage, I<inf>ON</inf>/I<inf>OFF</inf> ratio, g<inf>m</inf>, R<inf>on</inf>, contact resistance) showed monotonic variation with temperature, which has been explained using appropriate device physics and by considering the interaction of gate metals with Al<inf>2</inf>O<inf>3</inf>. Our results suggest that with appropriate choice of metals and gate dielectrics the 500 °C operation using β-Ga<inf>2</inf>O<inf>3</inf> has no bottlenecks.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122319955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Growth Optimization of InGaAs/GaAs Multi Quantum Well Microdisk Lasers on Flat-bottom CMOS-compatible (001) Si by Selective Area Heteroepitaxy 基于选择性面积异质外延的InGaAs/GaAs多量子阱微盘激光器生长优化

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI: 10.1109/CSW55288.2022.9930357

Bei Shi, Si Zhu, B. Song, J. Klamkin

引用次数: 1

Structure Dependent Characteristics of Infrared Radiation from Metal-Semiconductor Surface Micro-Structures 金属-半导体表面微结构红外辐射的结构依赖特性

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI: 10.1109/csw55288.2022.9930348

Hnin Lai Lai Aye, K. Hayashi, Haruki Orito, B. Lin, Ikuya Suzuki, B. Ma, Y. Ishitani

引用次数: 0

Compensating defects in high Al content Al0.85Ga0.15N films grown on an AlN substrate 在AlN衬底上生长高Al含量Al0.85Ga0.15N薄膜的缺陷补偿

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI: 10.1109/CSW55288.2022.9930424

M. Zvanut, Subash Paudel, R. Page, Y. Cho, H. Xing, D. Jena

{"title":"Compensating defects in high Al content Al0.85Ga0.15N films grown on an AlN substrate","authors":"M. Zvanut, Subash Paudel, R. Page, Y. Cho, H. Xing, D. Jena","doi":"10.1109/CSW55288.2022.9930424","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930424","url":null,"abstract":"AlxGa1-xN is a promising semiconductor for power electronics, but the mechanism for the conductivity produced by Si doping is controversial. In this work, temperature-dependent Hall measurements were conducted to address the conduction mechanism and electron paramagnetic resonance (EPR) was used to observe the Si dopant and other point defects. The samples studied were 0.5 um thick Al0.85Ga0.15N films grown by molecular beam epitaxy on a 1 um AlN film on an AlN substrate. The results reveal a nearly temperature independent carrier density, suggesting impurity band conduction. Notably, 1019 cm−3 carriers were detected at room temperature, despite the presence of several defects detected by EPR. The centers include the neutral donor with DX character and a second center, with as-yet undetermined origin, that likely partially compensates the Si donors during growth. The minimal effect of the unintentional defects and DX-character of the dopant is reasoned to be due to 1) the small energy barrier between the donor and DX level and 2) the low density (1017 cm−3) of the unintentional defects. Thus, although the growth of high Al content AlGaN may incur unwanted defects and the Si dopant may be a DX center, usefully high carrier concentrations may be achieved.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117199580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0