Growth Optimization of InGaAs/GaAs Multi Quantum Well Microdisk Lasers on Flat-bottom CMOS-compatible (001) Si by Selective Area Heteroepitaxy

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930357

Bei Shi, Si Zhu, B. Song, J. Klamkin

引用次数: 1

Abstract

InGaAs/GaAs multi-quantum wells were selectively grown on flat-bottom (001) silicon recesses and their efficiencies were improved by introducing GaAsP strain compensation layers. Room-temperature lasing from microdisks were subsequently fabricated and yield low lasing threshold.

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基于选择性面积异质外延的InGaAs/GaAs多量子阱微盘激光器生长优化

在平底(001)硅凹槽上选择性地生长InGaAs/GaAs多量子阱，并通过引入GaAsP应变补偿层提高了其效率。随后制备了微盘室温激光，产生了低激光阈值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2022 Compound Semiconductor Week (CSW)

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