Atse Julien Eric N'Dohi, C. Sonneville, Soufiane Saidi, T. Ngo, P. de Mierry, É. Frayssinet, Y. Cordier, L. Phung, F. Morancho, K. Isoird, J. Tasselli, H. Maher, D. Planson
{"title":"Multiphysics Characterizations of Vertical GaN Schottky Diodes","authors":"Atse Julien Eric N'Dohi, C. Sonneville, Soufiane Saidi, T. Ngo, P. de Mierry, É. Frayssinet, Y. Cordier, L. Phung, F. Morancho, K. Isoird, J. Tasselli, H. Maher, D. Planson","doi":"10.1109/CSW55288.2022.9930447","DOIUrl":null,"url":null,"abstract":"In this work, measurements from cathodo-luminescence (CL), micro-Raman spectroscopy and current-voltage I (V) have been coupled to assess the effects of physical parameters such as threading dislocations and effective doping level homogeneity on the electrical performances of vertical GaN Schottky diodes.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930447","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this work, measurements from cathodo-luminescence (CL), micro-Raman spectroscopy and current-voltage I (V) have been coupled to assess the effects of physical parameters such as threading dislocations and effective doping level homogeneity on the electrical performances of vertical GaN Schottky diodes.
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