金属-半导体表面微结构红外辐射的结构依赖特性

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/csw55288.2022.9930348

Hnin Lai Lai Aye, K. Hayashi, Haruki Orito, B. Lin, Ikuya Suzuki, B. Ma, Y. Ishitani

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引用次数: 0

摘要

由于界面极化电荷的振荡，观察了金属半导体表面条形结构下纵向光学声子共振太赫兹吸收和辐射。辐射强度受条形结构特征的影响，条形结构特征伴随着位于8.5THz的独立LO峰。低声子散射率在宽、高台面高度的半导体条纹中更为明显，而在窄的半导体条纹中吸收效率受到影响。

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Structure Dependent Characteristics of Infrared Radiation from Metal-Semiconductor Surface Micro-Structures

Longitudinal optical (LO) phonon resonant THz absorption and radiation subjected to metal-semiconductor surface stripe structures are observed due to oscillation of interface polarization charges. The radiation intensity is affected by the stripe structural characteristics accompanying independent LO peak positioned at 8.5THz. LO phonon scattering rate is more evident in wide and high mesa-height semiconductor stripes in which absorption efficiency is affected rather than narrower ones.

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2022 Compound Semiconductor Week (CSW)

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