Techniques for reduction of threading dislocations in metamorphic growth of GaSb on GaAs for realization of high mobility n and p channels

Interfacial misfit dislocation growth (IMF) mode can be used to achieve spontaneous and fully relaxed GaSb on GaAs however a high residual threading dislocation density of ~ 108 dislocations/cm2 is present. In this paper, we demonstrate a method to decrease the threading dislocation density using defect filtering layers with different filter designs. Moreover, we show the comparison of mobility of n and p pseudomorphic channels grown on these structures with and without using defect filtering layers.