垂直GaN肖特基二极管的多物理场特性

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930447

Atse Julien Eric N'Dohi, C. Sonneville, Soufiane Saidi, T. Ngo, P. de Mierry, É. Frayssinet, Y. Cordier, L. Phung, F. Morancho, K. Isoird, J. Tasselli, H. Maher, D. Planson

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引用次数: 0

摘要

在这项工作中，阴极发光(CL)，微拉曼光谱和电流电压I (V)的测量相结合，以评估物理参数，如螺纹位错和有效掺杂水平均匀性对垂直GaN肖特基二极管电性能的影响。

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Multiphysics Characterizations of Vertical GaN Schottky Diodes

In this work, measurements from cathodo-luminescence (CL), micro-Raman spectroscopy and current-voltage I (V) have been coupled to assess the effects of physical parameters such as threading dislocations and effective doping level homogeneity on the electrical performances of vertical GaN Schottky diodes.

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2022 Compound Semiconductor Week (CSW)

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