MOCVD Growth of InxSey Monolayers

Abstract

Two-dimensional (2D) layered III–VI semiconductor crystals were grown on c-plane sapphire by MOCVD. A growth scheme for monolayered InxSey was found. By optimizing the growth parameters such as temperature and Se to In ratio, the growth behaviour changes from a vapor liquid solid growth mode to a layer by layer growth mode. Due to these encouraging achievements, further progress leading to the deposition of 2D materials over large areas is expected.