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2022 Compound Semiconductor Week (CSW)最新文献

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Charge carrier transport in graphene field-effect transistor scaled down to submicron gate lengths 石墨烯场效应晶体管中的电荷载流子输运缩小到亚微米栅极长度
2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI: 10.1109/CSW55288.2022.9930439
I. H. Rodrigues, A. Vorobiev
{"title":"Charge carrier transport in graphene field-effect transistor scaled down to submicron gate lengths","authors":"I. H. Rodrigues, A. Vorobiev","doi":"10.1109/CSW55288.2022.9930439","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930439","url":null,"abstract":"We present a preliminary study of charge carrier transport in graphene field-effect transistor with gate lengths ranging from 2 μm down to 0.2 μm applying a model of the quasi-ballistic charge carrier transport. The analysis indicates that, in particular, at the gate length of 0.2 μm the fraction of the ballistic carriers can be up to 60 %. Our finding can be used as a guidance for further development of the graphene field-effect transistors with submicron gate length for variety of the advanced and emerging applications.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126113640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Demonstration of acceptor-like traps at positive polarization interfaces in Ga-polar p-type (AlGaN/AlN)/GaN superlattices ga -极性p型(AlGaN/AlN)/GaN超晶格中正极化界面的类受体陷阱论证
2022 Compound Semiconductor Week (CSW) Pub Date : 2022-05-28 DOI: 10.1109/CSW55288.2022.9930379
A. Krishna, A. Raj, N. Hatui, S. Keller, U. Mishra
{"title":"Demonstration of acceptor-like traps at positive polarization interfaces in Ga-polar p-type (AlGaN/AlN)/GaN superlattices","authors":"A. Krishna, A. Raj, N. Hatui, S. Keller, U. Mishra","doi":"10.1109/CSW55288.2022.9930379","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930379","url":null,"abstract":"This study experimentally shows the existence of acceptor traps at positive polarization interfaces acting as the source of holes in Ga-polar p-type uniformly doped (AlGaN/AlN)/GaN superlattices with low Mg doping. The observed hole concentrations which exceed that of the dopants (here, Mg) incorporated into the samples during growth, can be explained by the ionization of acceptor traps, placed 0.8 eV above the valence band of GaN, at positive polarization interfaces. All samples were epitaxially grown using Metal Organic Chemical Vapor Deposition, and were characterized using X-Ray Diffraction and room-temperature Hall measurements. The measured hole concentrations are compared to calculated values from STR FETIS® and the measured mobility trends are explained using the separation of the positive polation interfaces from the two-dimensional hole gas in the systems, strengthening the hypothesis.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"os-28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127865146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ultra-low Voltage GaN Vacuum Nanoelectronics 超低电压氮化镓真空纳米电子学
2022 Compound Semiconductor Week (CSW) Pub Date : 2022-05-01 DOI: 10.1109/csw55288.2022.9930455
George T. Wang, K. Sapkota, Albert Talin, F. Léonard, B. Gunning, G. Vizkelethy
{"title":"Ultra-low Voltage GaN Vacuum Nanoelectronics","authors":"George T. Wang, K. Sapkota, Albert Talin, F. Léonard, B. Gunning, G. Vizkelethy","doi":"10.1109/csw55288.2022.9930455","DOIUrl":"https://doi.org/10.1109/csw55288.2022.9930455","url":null,"abstract":"The III-nitride semiconductors are attractive for on-chip, solid-state vacuum nanoelectronics, having high thermal and chemical stability, low electron affinity, and high breakdown fields. Here we report top-down fabricated, lateral gallium nitride (GaN)-based nanoscale vacuum electron diodes operable in air, with ultra-low turn-on voltages down to ~0.24 V, and stable high field emission currents, tested up to several microamps for single-emitter devices. We present gap-size and pressure dependent studies which provide insights into the design of future nanogap vacuum electron devices. The vacuum nanodiodes also show high resistance to damage from 2.5 MeV proton exposure. Preliminary results on the fabrication and characteristics of lateral GaN nano vacuum transistors will also be presented. The results show promise for a new class of robust, integrated, III-nitride based vacuum nanoelectronics.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121804417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial type-I and type-II InAs-AlAsSb core–shell nanowires on silicon 硅上外延型i型和ii型InAs-AlAsSb核壳纳米线
2022 Compound Semiconductor Week (CSW) Pub Date : 2021-11-08 DOI: 10.1109/CSW55288.2022.9930369
F. del Giudice, S. Fust, P. Schmiedeke, Johannes Pantle, M. Döblinger, A. Ajay, Steffen Meder, H. Riedl, J. Finley, G. Koblmüller
{"title":"Epitaxial type-I and type-II InAs-AlAsSb core–shell nanowires on silicon","authors":"F. del Giudice, S. Fust, P. Schmiedeke, Johannes Pantle, M. Döblinger, A. Ajay, Steffen Meder, H. Riedl, J. Finley, G. Koblmüller","doi":"10.1109/CSW55288.2022.9930369","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930369","url":null,"abstract":"InAs-AlAsSb core-shell nanowire (NW) systems with widely tunable AlAsSb shell composition may offer many ideal properties suited for forthcoming applications in nanoelectronics, energy harvesting, as well as mid-infrared (MIR) photonics and optoelectronics integrated on silicon (Si). Here, we present high-uniformity InAs-AlAsSb NW arrays grown by selective-area molecular beam epitaxy. Further, we study systematically the effects of shell composition on the morphological, structural as well as strain and optical properties using correlated electron microscopy techniques, combined with micro-Raman scattering and micro-photoluminescence spectroscopy (PL). While controlling the emission wavelength over a large range (~0.4–0.55 eV), we highlight the tunability between type-I and type-II like transitions in this system supported by simulations.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125171274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Topological band structure in InAs/GaSb/InAs triple quantum wells InAs/GaSb/InAs三量子阱的拓扑能带结构
2022 Compound Semiconductor Week (CSW) Pub Date : 2021-08-05 DOI: 10.1109/CSW55288.2022.9930368
M. Meyer, S. Schmid, F. Jabeen, G. Bastard, Fabian Hartmann, S. Höfling
{"title":"Topological band structure in InAs/GaSb/InAs triple quantum wells","authors":"M. Meyer, S. Schmid, F. Jabeen, G. Bastard, Fabian Hartmann, S. Höfling","doi":"10.1109/CSW55288.2022.9930368","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930368","url":null,"abstract":"We present gate voltage and temperature dependent transport measurements of topological insulators based on InAs/GaSb/InAs triple quantum wells (TQW). Gate voltage dependent measurements enable us to monitor two electrons densities deep in the nonhybridized electron regime related to both InAs-wells. Furthermore, they reveal a clear hybridization gap and a Van Hove singularity (VHS) in the valence band (VB) because of the hybridized electron-hole band structure. Electron and hole densities coexist if the Fermi energy (EF) is within the gap and the bottom of the valence band at the Γ point whereas only single carrier types can be found far in the conduction or valence band. Thus, we are able to identify the topological band structure of this material system. Additionally, we study the temperature evolution of the hybridization gap and find a rather temperature insensitive hybridization gap energy.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126264271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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