InxSey单层膜的MOCVD生长

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930451

R. Günkel, J. Glowatzki, S. Patil, O. Maßmeyer, S. Chatterjee, A. Beyer, W. Stolz, K. Volz

{"title":"InxSey单层膜的MOCVD生长","authors":"R. Günkel, J. Glowatzki, S. Patil, O. Maßmeyer, S. Chatterjee, A. Beyer, W. Stolz, K. Volz","doi":"10.1109/CSW55288.2022.9930451","DOIUrl":null,"url":null,"abstract":"Two-dimensional (2D) layered III–VI semiconductor crystals were grown on c-plane sapphire by MOCVD. A growth scheme for monolayered InxSey was found. By optimizing the growth parameters such as temperature and Se to In ratio, the growth behaviour changes from a vapor liquid solid growth mode to a layer by layer growth mode. Due to these encouraging achievements, further progress leading to the deposition of 2D materials over large areas is expected.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MOCVD Growth of InxSey Monolayers\",\"authors\":\"R. Günkel, J. Glowatzki, S. Patil, O. Maßmeyer, S. Chatterjee, A. Beyer, W. Stolz, K. Volz\",\"doi\":\"10.1109/CSW55288.2022.9930451\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two-dimensional (2D) layered III–VI semiconductor crystals were grown on c-plane sapphire by MOCVD. A growth scheme for monolayered InxSey was found. By optimizing the growth parameters such as temperature and Se to In ratio, the growth behaviour changes from a vapor liquid solid growth mode to a layer by layer growth mode. Due to these encouraging achievements, further progress leading to the deposition of 2D materials over large areas is expected.\",\"PeriodicalId\":382443,\"journal\":{\"name\":\"2022 Compound Semiconductor Week (CSW)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Compound Semiconductor Week (CSW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSW55288.2022.9930451\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用MOCVD技术在c面蓝宝石表面生长出二维(2D)层状III-VI半导体晶体。找到了一种单层InxSey的生长方案。通过优化生长参数如温度和Se to In比，使生长行为由气液固生长模式转变为逐层生长模式。由于这些令人鼓舞的成就，进一步的进展导致大面积的二维材料沉积有望实现。

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MOCVD Growth of InxSey Monolayers

Two-dimensional (2D) layered III–VI semiconductor crystals were grown on c-plane sapphire by MOCVD. A growth scheme for monolayered InxSey was found. By optimizing the growth parameters such as temperature and Se to In ratio, the growth behaviour changes from a vapor liquid solid growth mode to a layer by layer growth mode. Due to these encouraging achievements, further progress leading to the deposition of 2D materials over large areas is expected.

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2022 Compound Semiconductor Week (CSW)

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