{"title":"基于选择性面积异质外延的InGaAs/GaAs多量子阱微盘激光器生长优化","authors":"Bei Shi, Si Zhu, B. Song, J. Klamkin","doi":"10.1109/CSW55288.2022.9930357","DOIUrl":null,"url":null,"abstract":"InGaAs/GaAs multi-quantum wells were selectively grown on flat-bottom (001) silicon recesses and their efficiencies were improved by introducing GaAsP strain compensation layers. Room-temperature lasing from microdisks were subsequently fabricated and yield low lasing threshold.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Growth Optimization of InGaAs/GaAs Multi Quantum Well Microdisk Lasers on Flat-bottom CMOS-compatible (001) Si by Selective Area Heteroepitaxy\",\"authors\":\"Bei Shi, Si Zhu, B. Song, J. Klamkin\",\"doi\":\"10.1109/CSW55288.2022.9930357\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InGaAs/GaAs multi-quantum wells were selectively grown on flat-bottom (001) silicon recesses and their efficiencies were improved by introducing GaAsP strain compensation layers. Room-temperature lasing from microdisks were subsequently fabricated and yield low lasing threshold.\",\"PeriodicalId\":382443,\"journal\":{\"name\":\"2022 Compound Semiconductor Week (CSW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Compound Semiconductor Week (CSW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSW55288.2022.9930357\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930357","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth Optimization of InGaAs/GaAs Multi Quantum Well Microdisk Lasers on Flat-bottom CMOS-compatible (001) Si by Selective Area Heteroepitaxy
InGaAs/GaAs multi-quantum wells were selectively grown on flat-bottom (001) silicon recesses and their efficiencies were improved by introducing GaAsP strain compensation layers. Room-temperature lasing from microdisks were subsequently fabricated and yield low lasing threshold.
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