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2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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Design and Simulation of Apodized π-Phase Shifted FBG as Simultaneous Sensing of Strain, Temperature, and Vibration 同时传感应变、温度和振动的apozed π移相FBG的设计与仿真
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807038
F. Kouhrangiha, M. Kahrizi, K. Khorasani
{"title":"Design and Simulation of Apodized π-Phase Shifted FBG as Simultaneous Sensing of Strain, Temperature, and Vibration","authors":"F. Kouhrangiha, M. Kahrizi, K. Khorasani","doi":"10.1109/NUSOD.2019.8807038","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807038","url":null,"abstract":"Bragg Gratings (FBGs) in Structural Health Monitoring (SHM) are used as an optical sensor to detect various physical phenomena to make the system more reliable and accurate. In this work, theoretical analysis and numerical simulation of an Apodized π-Phase Shifted Fiber Bragg Grating (π-PS FBG) sensor is proposed to evaluate the performance of this non-uniform FBG for simultaneous strain, temperature, and vibration sensing. Due to the accuracy and spectral characteristics of π-PS FBG, it’s chosen as an optical sensor to enhance the sensibility measurements. The sensor signals designed and simulated by solving coupled mode equations using transfer matrix method in MATLAB to represent the reflected spectrum of PS FBG. As a spectral improvement purpose, the Gaussian apodization function is applied on FBG reflection spectrum to optimize spectra by supressing side lobes. Lastly, the reference FBG method calculation is used to separate vibration and temperature effects from the strain measurements.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122617404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Transient Simulations and Analyses of Thermally Tunable Devices 热可调谐器件的瞬态仿真与分析
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807031
Fei Duan, Kai Chen, Yonglin Yu
{"title":"Transient Simulations and Analyses of Thermally Tunable Devices","authors":"Fei Duan, Kai Chen, Yonglin Yu","doi":"10.1109/NUSOD.2019.8807031","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807031","url":null,"abstract":"we present transient simulations and analytic formulas for the thermally tunable devices with suspended waveguide. The response speeds can be improved about 10% and 40%, when the thickness of metallic heater varies from 0.08 μm to 0.16 μm and the cladding thickness increases from 0.4 μm to 1.2 μm, respectively. Moreover, replacing the cladding of silica by ones of Alumina, aluminum nitride and silicon nitride, the response speed have a significant boost, more than 65%.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"23 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132502992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Theoretical simulation of the barrier T2SLs InAs/InAsSb/B-AlSb longwave detector operating under thermoelectrical cooling 热电冷却下T2SLs InAs/InAsSb/B-AlSb长波探测器的理论模拟
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807046
P. Martyniuk, K. Michalczewski, T. Tsai, C. H. Wu, Y. R. Wu
{"title":"Theoretical simulation of the barrier T2SLs InAs/InAsSb/B-AlSb longwave detector operating under thermoelectrical cooling","authors":"P. Martyniuk, K. Michalczewski, T. Tsai, C. H. Wu, Y. R. Wu","doi":"10.1109/NUSOD.2019.8807046","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807046","url":null,"abstract":"The paper reports on the barrier longwave infrared nBnn+ detector based on InAs/InAsSb (xSb = 0.38) type-II superlattice operating under thermoelectrical cooling ( > 190 K). AlSb was proved to minimize barrier in valence band in analyzed temperature range and assumed architecture. The highest detectivity of the simulated structure was assessed at the level of ~ 109 cmHz1/2/W at T ~ 230 K assuming immersion contribution.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133318801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highspeed Broadband Optical Modulation using Symmetrical Metal-Insulator-Metal Graphene Hybrid Plasmonic Waveguide 采用对称金属-绝缘体-金属石墨烯混合等离子体波导的高速宽带光调制
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806993
M. S. Alam, K. B. R. Rakib Hasan, M. A. Islam
{"title":"Highspeed Broadband Optical Modulation using Symmetrical Metal-Insulator-Metal Graphene Hybrid Plasmonic Waveguide","authors":"M. S. Alam, K. B. R. Rakib Hasan, M. A. Islam","doi":"10.1109/NUSOD.2019.8806993","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806993","url":null,"abstract":"Optical capacitance effect and metal-insulator-metal mode coupling have been exploited in this work to enhance the light-graphene interaction. Hence, large extinction ratio and high modulation bandwidth are achieved simultaneously.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133503175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vector Modulation Scheme using Three Phase Modulator 使用三相调制器的矢量调制方案
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806843
Gazi Mahamud Hasan, M. Hasan, K. Hinzer, T. Hall
{"title":"Vector Modulation Scheme using Three Phase Modulator","authors":"Gazi Mahamud Hasan, M. Hasan, K. Hinzer, T. Hall","doi":"10.1109/NUSOD.2019.8806843","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806843","url":null,"abstract":"A novel optical I-Q modulator circuit consisting of three phase modulator in parallel is proposed. Theoretical analysis is done by the minimization of an error function of an under-determined system, which delivers specific optical phase relationship and modulation constraints to achieve I-Q modulation. A single sideband modulation with carrier suppression is obtained at the output of the proposed architecture, which is in agreement with the analytical development. Numerical demonstration of the performance of the architecture is done by industry-standard software simulation. Scenarios considering both ideal and imperfect power balances and phase relations to the phase modulators are also considered.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"246 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133516924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine learning design of subwavelengh integrated photonic devices 亚波长集成光子器件的机器学习设计
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806835
D. Melati, M. K. Dezfouli, Y. Grinberg, S. Janz, J. Schmid, P. Cheben, Danxia Xu
{"title":"Machine learning design of subwavelengh integrated photonic devices","authors":"D. Melati, M. K. Dezfouli, Y. Grinberg, S. Janz, J. Schmid, P. Cheben, Danxia Xu","doi":"10.1109/NUSOD.2019.8806835","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806835","url":null,"abstract":"Use of subwavelength metastructures opens new degrees of freedom to control and manipulate propagation of light in planar waveguide devices. This advantage comes with the cost of increased design complexity since more parameters must be simultaneously optimized. Here we show how machine learning dimensionality reduction can be used to obtain a compact representation of a multi-parameter design space revealing the relationship between different design parameters. This provides the designer with a global perspective on the design space and enables informed decisions based on the relative priorities of different performance metrics.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127754700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Charge confining mechanisms in III-V semiconductor nanowire III-V型半导体纳米线的电荷约束机制
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806977
O. Marquardt, P. Corfdir, J. Lähnemann, M. Ramsteiner, O. Brandt, L. Geelhaar, M. Hill, L. Lauhon, A. Hassan, U. Pietsch
{"title":"Charge confining mechanisms in III-V semiconductor nanowire","authors":"O. Marquardt, P. Corfdir, J. Lähnemann, M. Ramsteiner, O. Brandt, L. Geelhaar, M. Hill, L. Lauhon, A. Hassan, U. Pietsch","doi":"10.1109/NUSOD.2019.8806977","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806977","url":null,"abstract":"III-V semiconductor nanowires exhibit unique features for application in novel optoelectronic devices. Due to their large surface-to-volume ratio, the realization of heterostructures beyond the capabilities of planar growth, that can still be integrated in Si-based electronics, becomes possible. Furthermore, polytypism was observed e.g. in GaAs nanowires such that different crystal phases coexist in the same nanowire. As different crystal phases have different electronic properties, this feature can be exploited to form crystal-phase heterostructures with atomically flat interfaces and only very small elastic deformation. We will discuss the specifics of electronic-structure simulations in such nanowires and present recent example studies.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"255 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128002206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Control of Solitons in the regime of event horizons in nonlinear dispersive optical media 非线性色散光学介质中视界区孤子的控制
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807060
U. Bandelow, S. Amiranashvili, S. Pickartz
{"title":"Control of Solitons in the regime of event horizons in nonlinear dispersive optical media","authors":"U. Bandelow, S. Amiranashvili, S. Pickartz","doi":"10.1109/NUSOD.2019.8807060","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807060","url":null,"abstract":"We describe the propagation of nonlinear pulses in dispersive optical media on base of our generalized approach [1]. It is known, that intense pulses, such as solitons, can mimic event horizons for smaller optical waves. We prove that such strong pulses can be dramatically influenced in the course of nonlinear interaction with the proper dispersive waves. Moreover, it will be demonstrated, both numerically and more efficiently by a new analytic theory [2], that small optical waves can be used to control such solitons [3], [4]. In particular, the typical pulse degradation caused by Raman-scattering can be completely compensated by these means [4], which is supported by recent experiments [5].","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125810426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomistic analysis of transport properties of InGaN/GaN multi-quantum well InGaN/GaN多量子阱输运性质的原子分析
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806898
M. O’Donovan, M. Luisier, E. O’Reilly, S. Schulz
{"title":"Atomistic analysis of transport properties of InGaN/GaN multi-quantum well","authors":"M. O’Donovan, M. Luisier, E. O’Reilly, S. Schulz","doi":"10.1109/NUSOD.2019.8806898","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806898","url":null,"abstract":"We present an atomistic analysis of transport properties of an InGaN/GaN multi-quantum well system. Our study is carried out in the combined frame of tight-binding and Non-Equilibrium Green’s Function theories. In our fully three-dimensional treatment, special attention is paid to the impact of random alloy fluctuations on the electron transmission probability. The calculations reveal that the alloy microstructure significantly impacts the transmission at least for the energetically lowest bound states in the quantum wells.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116187707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2D materials for optoelectronic devices 光电器件用二维材料
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806933
M. Bieniek, L. Szulakowska, P. Hawrylak
{"title":"2D materials for optoelectronic devices","authors":"M. Bieniek, L. Szulakowska, P. Hawrylak","doi":"10.1109/NUSOD.2019.8806933","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806933","url":null,"abstract":"There is currently interest in 2D transition metal dichalcogenide (TMDC) materials, MX 2 (M=Mo,W, X=S,Se,Te), for optoelectronic devices [1] , [2] , [3] . These materials, when thinned down to a single layer, are an example of atomically thin truly two dimensional direct gap semiconductors. The reduction of dimensionality is a reason for strongly enhanced electron - electron interactions, which result in optical properties at room temperature dominated by neutral and charged excitons with binding energies orders of magnitude larger than room temperature and those found in standard compound semiconductors, e.g., GaAs quantum wells.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124315764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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