Atomistic analysis of transport properties of InGaN/GaN multi-quantum well

Abstract

We present an atomistic analysis of transport properties of an InGaN/GaN multi-quantum well system. Our study is carried out in the combined frame of tight-binding and Non-Equilibrium Green’s Function theories. In our fully three-dimensional treatment, special attention is paid to the impact of random alloy fluctuations on the electron transmission probability. The calculations reveal that the alloy microstructure significantly impacts the transmission at least for the energetically lowest bound states in the quantum wells.