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2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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Detailed Balance Efficiency of 1310 nm Multijunction Photonic Power Converters 1310nm多结光子功率变换器的详细平衡效率
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-08 DOI: 10.1109/NUSOD.2019.8807036
Daixi Xia, M. Beattie, M. C. Tam, M. Wilkins, C. Valdivia, Z. Wasilewski, K. Hinzer, J. Krich
{"title":"Detailed Balance Efficiency of 1310 nm Multijunction Photonic Power Converters","authors":"Daixi Xia, M. Beattie, M. C. Tam, M. Wilkins, C. Valdivia, Z. Wasilewski, K. Hinzer, J. Krich","doi":"10.1109/NUSOD.2019.8807036","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807036","url":null,"abstract":"We present modeled detailed balance efficiency of multijunction photonic power converters operating at 1310 nm at a laser intensity of 5.88× 105 W/m2, corresponding to our test laser power and cell size, in two scenarios: (1) with an absorbing substrate and (2) with a perfect specular back reflector. We show that, in the radiative limit, efficiency increases as a function of number of junctions in the case of an absorbing substrate. In this case, efficiency can reach as high as 69% with 15 junctions. In the case of a perfect specular back reflector, efficiency reaches more than 75% and is not sensitive to the number of junctions. This insensitivity allows freedom in future device design.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133804879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A generalized Scharfetter–Gummel scheme for degenerate and non-isothermal semiconductor 简并非等温半导体的广义Scharfetter-Gummel格式
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-08 DOI: 10.1109/NUSOD.2019.8806839
M. Kantner
{"title":"A generalized Scharfetter–Gummel scheme for degenerate and non-isothermal semiconductor","authors":"M. Kantner","doi":"10.1109/NUSOD.2019.8806839","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806839","url":null,"abstract":"We present a highly accurate generalization of the Scharfetter–Gummel scheme for the discretization of the current densities in degenerate semiconductors under non-isothermal conditions. The underlying model relies on the Kelvin formula for the Seebeck coefficient, which has the intriguing property that the ∇T -term in the electrical current density expressions vanishes exactly when passing to the drift-diffusion form – even though the thermoelectric cross-coupling is fully taken into account.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121294015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Compact transmission-line equivalent circuit model for silicon solar cell simulation 硅太阳能电池模拟的紧凑传输在线等效电路模型
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-08 DOI: 10.1109/NUSOD.2019.8806838
M. Kisin, Denis V. Mamedov, C. Chuang, H. El-Ghoroury
{"title":"Compact transmission-line equivalent circuit model for silicon solar cell simulation","authors":"M. Kisin, Denis V. Mamedov, C. Chuang, H. El-Ghoroury","doi":"10.1109/NUSOD.2019.8806838","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806838","url":null,"abstract":"We demonstrate a compact equivalent circuit model for transmission-line representation of monocrystalline silicon solar cell. The model is suitable for solar cell characterization in terms of impedance/admittance spectroscopy. Number of coordinate partition elements necessary to adequately represent the device characteristics is reasonably comparable with the number of solar cell structure epi-layers. This makes the model convenient for transient effect simulations in external electrical circuits where fully distributed transmission-line model is too complex for direct time-domain calculations.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128050186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells 中间带太阳能电池ii型GaSb/GaAs量子环的能带结构工程
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-08 DOI: 10.1109/NUSOD.2019.8807051
R. Arkani, C. Broderick, E. O’Reilly
{"title":"Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells","authors":"R. Arkani, C. Broderick, E. O’Reilly","doi":"10.1109/NUSOD.2019.8807051","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807051","url":null,"abstract":"Type-II quantum-confined heterostructures constitute a promising approach to realise highly efficient intermediate band solar cells (IBSCs), due to their long radiative lifetimes and the flexibility with which their electronic and optical properties can be engineered. To quantify the potential of type-II GaSb/GaAs quantum rings (QRs) for IBSC applications we undertake a theoretical investigation of their electronic properties. In these heterostructures the intermediate band is formed by bound hole states which are strongly localised within the QR. We demonstrate that the unconventional QR geometry provides a flexible platform to engineer the valence band structure, enabling optimum energy gaps – which maximise overall IBSC efficiency – to be obtained via structural optimisation. Our results emphasise that utilising QRs for IBSC applications requires careful control of QR morphology in epitaxial growth.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131532809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improved Optical 1xN On-Chip-Switches Based on Generalized Mach-Zehnder Interferometers 基于广义马赫-曾德干涉仪的改进光学1xN片上开关
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-08 DOI: 10.1109/NUSOD.2019.8806903
N. Hoppe, Leonie Kauke, L. Rathgeber, Thomas Föhn, W. Vogel, M. Berroth
{"title":"Improved Optical 1xN On-Chip-Switches Based on Generalized Mach-Zehnder Interferometers","authors":"N. Hoppe, Leonie Kauke, L. Rathgeber, Thomas Föhn, W. Vogel, M. Berroth","doi":"10.1109/NUSOD.2019.8806903","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806903","url":null,"abstract":"We present a theoretical study of 1xN optical routing networks consisting of generalized Mach-Zehnder switches, that are based on multimode interferometers. This work gives a brief overview of the necessary phase conditions and resulting phase shifter requirements in the 1xN switches. Using the presented approach as 1x4 switch with parallel phase shifters, a 20% phaseshifter-loss reduction becomes possible.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128166829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On a Database of Simulated TEM Images for In(Ga)As/GaAs Quantum Dots with Various Shape 不同形状的In(Ga)As/GaAs量子点模拟TEM图像数据库研究
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-08 DOI: 10.1109/NUSOD.2019.8807025
T. Koprucki, Anieza Maltsi, T. Niermann, T. Streckenbach, K. Tabelow, J. Polzehl
{"title":"On a Database of Simulated TEM Images for In(Ga)As/GaAs Quantum Dots with Various Shape","authors":"T. Koprucki, Anieza Maltsi, T. Niermann, T. Streckenbach, K. Tabelow, J. Polzehl","doi":"10.1109/NUSOD.2019.8807025","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807025","url":null,"abstract":"We present a database of simulated transmission electron microscopy (TEM) images for In(Ga)As quantum dots (QDs) embedded in bulk-like GaAs samples. The database contains series of TEM images for QDs with various shapes, e.g. pyramidal and lens-shaped, depending on the size and indium concentration as well as on the excitation conditions of the electron beam. This database is a key element of a novel concept for model-based geometry reconstruction (MBGR) of semiconductor QDs from TEM imaging and can be used to establish a statistical procedure for the estimation of QD properties and classification of QD types based on machine learning techniques.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128034391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Bandwidth-Enhancement of Silicon Grating Couplers Using Dispersive Coatings 用色散涂层增强硅光栅耦合器的带宽
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-08 DOI: 10.1109/NUSOD.2019.8806940
N. Hoppe, Rouven H. Klenk, L. Rathgeber, W. Vogel, M. Berroth
{"title":"Bandwidth-Enhancement of Silicon Grating Couplers Using Dispersive Coatings","authors":"N. Hoppe, Rouven H. Klenk, L. Rathgeber, W. Vogel, M. Berroth","doi":"10.1109/NUSOD.2019.8806940","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806940","url":null,"abstract":"The design of a highly efficient fiber-to-chip link using a silicon grating coupler with an enhanced optical bandwidth in a 250 nm silicon-on-insulator platform is presented. Consisting of a standard grating coupler with backside mirror and a special dispersive coating, this link offers a simple design and an enhanced 1-dB-bandwidth. Special attention is paid to the influence of the coating-dispersion on bandwidth. Optical simulations demonstrate the performance of the fiber-to-chip links at a wavelength of about 1550 nm and for the transverse electric waveguide mode.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115620669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the sensitivity of optical fiber surface plasmon resonance based sensor for detection of dielectric analytes using COMSOL Multiphysics 基于COMSOL Multiphysics的光纤表面等离子体共振传感器检测介质分析物的灵敏度研究
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-08 DOI: 10.1109/NUSOD.2019.8806791
Armin Agharazy Dormeny, Parsoua Abedini Sohi, M. Kahrizi
{"title":"On the sensitivity of optical fiber surface plasmon resonance based sensor for detection of dielectric analytes using COMSOL Multiphysics","authors":"Armin Agharazy Dormeny, Parsoua Abedini Sohi, M. Kahrizi","doi":"10.1109/NUSOD.2019.8806791","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806791","url":null,"abstract":"Due to the importance of the public health toward the exposure to hazardous gases, real-time and sensitive gas sensors are among the priorities at present. Among different types of gas sensors, optical sensors with advantages like high sensitivity, low cost, miniaturization, and online monitoring have received great attention between the researchers. In this article, a fiber optic sensor based on surface plasmon resonance (SPR) of gold thin film is simulated by COMSOL Multiphysics. For this purpose, a single-mode optical fiber was considered to be uncladed on its middle part and coated with a thin film of gold and the sensitivity and resonance condition of the device was investigated as a function of thickness of the metal.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116109740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative analysis of electronic structure evolution in Ge1-xSnx and Ge1−xPbx alloys Ge1- xsnx和Ge1- xPbx合金电子结构演变的比较分析
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806886
C. Broderick, Edmond J. O’Halloran, E. O’Reilly
{"title":"Comparative analysis of electronic structure evolution in Ge1-xSnx and Ge1−xPbx alloys","authors":"C. Broderick, Edmond J. O’Halloran, E. O’Reilly","doi":"10.1109/NUSOD.2019.8806886","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806886","url":null,"abstract":"We present a comparative analysis of electronic structure evolution and the indirect- to direct-gap transition in Ge<inf>1−x</inf>(Sn,Pb)<inf>x</inf> group-IV semiconductor alloys. We present first principles disordered alloy electronic structure calculations for Ge<inf>1−x</inf>(Sn,Pb)<inf>x</inf> special quasi-random structures, and find a significantly larger band gap reduction in Ge<inf>1−x</inf>Pb<inf>x</inf> than in Ge<inf>1−x</inf>Sn<inf>x</inf> at fixed x. We calculate that Ge<inf>1−x</inf>Pb<inf>x</inf> becomes a direct gap semiconductor close to the composition (x ≈ 7%) at which it also becomes a zero-gap semiconductor. The indirect-to direct-gap transition in Ge<inf>1−x</inf>Sn<inf>x</inf> occurs over an extended composition range, also centered around 7%, and is driven by Sn-induced mixing of Ge Γ and L conduction states. The pronounced band mixing effects present in Ge<inf>1−x</inf>Sn<inf>x</inf> alloys will have significant implications for optical and transport properties.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126648155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optical frequency multiplication technique using cascaded modulator to achieve RF power advantage 光倍增技术采用级联调制器实现射频功率优势
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806895
Gazi Mahamud Hasan, M. Hasan, K. Hinzer, T. Hall
{"title":"Optical frequency multiplication technique using cascaded modulator to achieve RF power advantage","authors":"Gazi Mahamud Hasan, M. Hasan, K. Hinzer, T. Hall","doi":"10.1109/NUSOD.2019.8806895","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806895","url":null,"abstract":"An optical millimeter-wave generation scheme consisting of four Mach-Zehnder modulator in series, each biased at its maximum transmission point is analysed by an optical path tracing method. Simulation using Virtual Photonic Inc. software package is presented as a proof of concept. The simulation results show that the proposed architecture can perform frequency octupling function with a significant RF advantage. The suppression of carrier and other unwanted harmonics by design, lower RF input power, wide operating range in terms of modulation index with satisfactory performance, and a simple filterless architecture make this circuit an attractive choice to be integrated in any material platform that offers electro-optic modulators.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129879666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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