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2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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2D Modeling of InGaP/GaAs/InGaAs Four-Junction Solar Cell InGaP/GaAs/InGaAs四结太阳能电池的二维建模
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806906
Y. G. Xiao, Y. Sheng, Z. Q. Li, Z. Simon Li
{"title":"2D Modeling of InGaP/GaAs/InGaAs Four-Junction Solar Cell","authors":"Y. G. Xiao, Y. Sheng, Z. Q. Li, Z. Simon Li","doi":"10.1109/NUSOD.2019.8806906","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806906","url":null,"abstract":"Two-dimensional (2D) modeling is reported for InGaP/GaAs/InGaAs four-junction solar cell with tunnel junctions. The cell basic physical properties were demonstrated. The simulated results indicate one-sun efficiency about 40.1% with short-circuit current density as 126.63 A/m2 and open-circuit voltage as 3.69V. High efficiency up to 45.9% under 100 sun illumination could be achieved.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128271106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene Multilayers for Quantum Microwave Signal Up-Conversion to the Optical Domain 量子微波信号上转换到光域的石墨烯多层材料
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807069
M. Qasymeh, H. Eleuch
{"title":"Graphene Multilayers for Quantum Microwave Signal Up-Conversion to the Optical Domain","authors":"M. Qasymeh, H. Eleuch","doi":"10.1109/NUSOD.2019.8807069","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807069","url":null,"abstract":"We propose a new scheme for tunable quantum microwave signal upconversion to the optical frequency domain using graphene multilayers. The graphene layers are electrically connected, biased by a quantum level microwave signal, and subjected to intensive optical pump. The principle of operation is based on modifying the graphene conductivity by the biasing microwave signal. It then follows that an upper optical sideband is generated, while the lower sideband is resonantly attenuated by the destruction of the layered medium . Our calculations show large number of upconverted photons for microvolt driving microwave signal.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123629155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of Carrier Transport through GaN/AlN Periodically Stacked Structure Photodiode GaN/AlN周期性堆叠结构光电二极管的载流子输运分析
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806922
Wangping Wang, Qian Li
{"title":"Analysis of Carrier Transport through GaN/AlN Periodically Stacked Structure Photodiode","authors":"Wangping Wang, Qian Li","doi":"10.1109/NUSOD.2019.8806922","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806922","url":null,"abstract":"Carrier transport through GaN/AlN periodically stacked structure photodiode (PSSPD) is investigated considering the polarization field in the structure. The movement of electrons out of quantum well is found as Fowler-Nordheim tunneling process helped by the polarization field in AlN barrier. The transport of electrons through PSSPD is found influenced by the reverse polarization field in GaN layer but could be suppressed by the external electric field. Different rates of current increase are also predicted from the analysis of polarized band structure, which is consistent with the PSSPD experimental results.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115787343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Power 840-nm ASE Source Using an SLED-SOA MOPA Architecture 采用SLED-SOA MOPA架构的大功率840nm ASE源
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807008
N. Matuschek, R. Rezzonico, M. Duelk
{"title":"High-Power 840-nm ASE Source Using an SLED-SOA MOPA Architecture","authors":"N. Matuschek, R. Rezzonico, M. Duelk","doi":"10.1109/NUSOD.2019.8807008","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807008","url":null,"abstract":"We are demonstrating a high-power, broadband 840-nm light source, where amplified spontaneous emission (ASE) from a superluminescent light emitting diode (SLED) is amplified by a semiconductor optical amplifier (SOA) in order to generate power levels of 100-300 mW in free-space. The optical architecture of this light source resembles a master oscillator power amplifier (MOPA) configuration.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131786580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Efficient Fully-Coupled Electro-Optical Simulation Framework for Large-Area Planar Device 面向大面积平面器件的高效全耦合电光仿真框架
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806904
T. Sadi, A. Casado, I. Radevici, Pyry Kivisaari, J. Oksanen
{"title":"Efficient Fully-Coupled Electro-Optical Simulation Framework for Large-Area Planar Device","authors":"T. Sadi, A. Casado, I. Radevici, Pyry Kivisaari, J. Oksanen","doi":"10.1109/NUSOD.2019.8806904","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806904","url":null,"abstract":"Ongoing progress in optoelectronic devices necessitates computational tools that self-consistently account for both electronic charge carrier and photon dynamics and interactions. In this paper, we introduce an efficient simulation framework, using the concepts of nonlinear transmission lines, to study fully-coupled charge and photon transport in planar devices. Within the developed framework, the drift-diffusion equations for charge transport are self-consistently coupled with the radiative transfer equation for photon transport and a separate lateral transport model, to obtain a realistic picture of the electro-optical device behaviour. The model allows the detailed study of large-area devices with full access to the wavelength and angle dependent features. It also accounts for photon recycling, providing deeper insight into the complex nature of optical energy transfer and losses in planar multi-layer structures. The efficiency of the framework is illustrated by applying it to study intracavity diode structures, which are intended for exploring high-power electroluminescent cooling in III-V light-emitting diodes.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132608710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of quantum light sources using the self-consistently coupled Schrödinger-Poisson-Drift-Diffusion-Lindblad syste 利用自洽耦合Schrödinger-Poisson-Drift-Diffusion-Lindblad系统模拟量子光源
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806869
M. Kantner
{"title":"Simulation of quantum light sources using the self-consistently coupled Schrödinger-Poisson-Drift-Diffusion-Lindblad syste","authors":"M. Kantner","doi":"10.1109/NUSOD.2019.8806869","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806869","url":null,"abstract":"The device-scale simulation of electrically driven quantum light sources based on semiconductor quantum dots requires a combination of the (classical) semiconductor device equations with cavity quantum electrodynamics. In this paper, we extend our previously developed hybrid quantum-classical model system – where we have coupled the drift-diffusion system with a Lindblad-type quantum master equation – by including a self-consistent Schrödinger–Poisson problem. The latter describes the (quasi-)bound states of the quantum dot carriers. The extended model allows to describe the bias-dependency of the emission spectrum due to the quantum confined Stark effect.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131039988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Pre-compensation of Nonlinear Distortion of a Silicon Microring Modulator Using Back-calculation 用反算法预补偿硅微环调制器的非线性畸变
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806919
Peng Wang, J. Cartledge, Wai-Yip Chan
{"title":"Pre-compensation of Nonlinear Distortion of a Silicon Microring Modulator Using Back-calculation","authors":"Peng Wang, J. Cartledge, Wai-Yip Chan","doi":"10.1109/NUSOD.2019.8806919","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806919","url":null,"abstract":"A pre-compensation scheme for nonlinear distortion of a silicon microring modulator using back-calculation of the modulator model is proposed. The bit error ratio performance shows significant improvement with back-calculation for a 28 Gbaud PAM-4 signal transmitted over 15 km single mode fiber.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133186812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimizing Bifacial Silicon Heterojunction Solar Cells for High-Latitudes 高纬度地区双面硅异质结太阳能电池的优化
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806860
E. Tonita, Amanda Lewis, C. Valdivia, K. Hinzer
{"title":"Optimizing Bifacial Silicon Heterojunction Solar Cells for High-Latitudes","authors":"E. Tonita, Amanda Lewis, C. Valdivia, K. Hinzer","doi":"10.1109/NUSOD.2019.8806860","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806860","url":null,"abstract":"Two-dimensional optoelectronic modelling of bifacial silicon heterojunction solar cells is completed in Synopsys TCAD Sentaurus to optimize and characterize cell performance for regions of high latitude where cells experience high average air mass and increased angles of incidence. Cell performance under bifacial illumination conditions representative of the Canadian High Arctic, with independent spectra illuminating the front and rear faces of the cell, is studied. The baseline cell structure has an efficiency of 20.4% and 19.3% under front-face illumination with AM1.5G and AM3.0G, respectively. Improvements will be made through the addition of surface texturing and the optimization of doping, layer thicknesses, and antireflection coatings.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124550153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Alternative approach to optimizing optical spacer layer thickness in solar cell using evolutionary algorithm 利用进化算法优化太阳能电池光学间隔层厚度的替代方法
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806865
Premkumar Vincent, Gwenaelle Cunha Sergio, Jaewon Jang, I. Kang, P. Lang, Hyeok Kim, Minho Lee, J. Bae
{"title":"Alternative approach to optimizing optical spacer layer thickness in solar cell using evolutionary algorithm","authors":"Premkumar Vincent, Gwenaelle Cunha Sergio, Jaewon Jang, I. Kang, P. Lang, Hyeok Kim, Minho Lee, J. Bae","doi":"10.1109/NUSOD.2019.8806865","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806865","url":null,"abstract":"This work is inspired by Darwin's biological evolution theory: natural selection. We propose to use genetic evolutionary algorithm to optimize the search for the optimal thickness in solar cells with regards to maximizing short-circuit current density. Optical spacer layer thickness need to be optimized in order to achieve maximum absorption of the incoming light by the solar cell. In order to obtain the best optical spacer thickness, we perform multiple simulations with different number of population, number of generations, mutation probability, number of bits, and selection and crossover methods. Our preliminary experiments show that the introduction of evolutionary algorithm result in a satisfactorily accurate search method when compared to brute-force. The future works on utilizing the full ability of evolutionary algorithm will be presented at the conference.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114343178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Hybrid electromagnetic modelling of coherent radiation in electrically-pumped semiconductor lasers 电泵浦半导体激光器相干辐射的混合电磁建模
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807017
M. Krysicki, B. Salski
{"title":"Hybrid electromagnetic modelling of coherent radiation in electrically-pumped semiconductor lasers","authors":"M. Krysicki, B. Salski","doi":"10.1109/NUSOD.2019.8807017","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807017","url":null,"abstract":"In this paper method for linking device simulation (drift diffusion model) and electromagnetic simulation is presented. For full wave simulation Finite Difference Time Domain method with auxiliary differential equation has been used. Lasing model has been characterized by four-level two-electron atomic system with Pauli Exclusion Principle (PEP) and with electric pumping ratio extension.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128579516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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