High-Power 840-nm ASE Source Using an SLED-SOA MOPA Architecture

Abstract

We are demonstrating a high-power, broadband 840-nm light source, where amplified spontaneous emission (ASE) from a superluminescent light emitting diode (SLED) is amplified by a semiconductor optical amplifier (SOA) in order to generate power levels of 100-300 mW in free-space. The optical architecture of this light source resembles a master oscillator power amplifier (MOPA) configuration.