Analysis of Carrier Transport through GaN/AlN Periodically Stacked Structure Photodiode

Abstract

Carrier transport through GaN/AlN periodically stacked structure photodiode (PSSPD) is investigated considering the polarization field in the structure. The movement of electrons out of quantum well is found as Fowler-Nordheim tunneling process helped by the polarization field in AlN barrier. The transport of electrons through PSSPD is found influenced by the reverse polarization field in GaN layer but could be suppressed by the external electric field. Different rates of current increase are also predicted from the analysis of polarized band structure, which is consistent with the PSSPD experimental results.