采用SLED-SOA MOPA架构的大功率840nm ASE源

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI:10.1109/NUSOD.2019.8807008

N. Matuschek, R. Rezzonico, M. Duelk

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引用次数: 2

摘要

我们正在展示一种高功率，宽带840nm光源，其中来自超发光二极管(SLED)的放大自发发射(ASE)被半导体光放大器(SOA)放大，以便在自由空间产生100-300 mW的功率水平。该光源的光学结构类似于主振荡器功率放大器(MOPA)配置。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-Power 840-nm ASE Source Using an SLED-SOA MOPA Architecture

We are demonstrating a high-power, broadband 840-nm light source, where amplified spontaneous emission (ASE) from a superluminescent light emitting diode (SLED) is amplified by a semiconductor optical amplifier (SOA) in order to generate power levels of 100-300 mW in free-space. The optical architecture of this light source resembles a master oscillator power amplifier (MOPA) configuration.

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2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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