InGaP/GaAs/InGaAs四结太阳能电池的二维建模

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI:10.1109/NUSOD.2019.8806906

Y. G. Xiao, Y. Sheng, Z. Q. Li, Z. Simon Li

{"title":"InGaP/GaAs/InGaAs四结太阳能电池的二维建模","authors":"Y. G. Xiao, Y. Sheng, Z. Q. Li, Z. Simon Li","doi":"10.1109/NUSOD.2019.8806906","DOIUrl":null,"url":null,"abstract":"Two-dimensional (2D) modeling is reported for InGaP/GaAs/InGaAs four-junction solar cell with tunnel junctions. The cell basic physical properties were demonstrated. The simulated results indicate one-sun efficiency about 40.1% with short-circuit current density as 126.63 A/m2 and open-circuit voltage as 3.69V. High efficiency up to 45.9% under 100 sun illumination could be achieved.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"2D Modeling of InGaP/GaAs/InGaAs Four-Junction Solar Cell\",\"authors\":\"Y. G. Xiao, Y. Sheng, Z. Q. Li, Z. Simon Li\",\"doi\":\"10.1109/NUSOD.2019.8806906\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two-dimensional (2D) modeling is reported for InGaP/GaAs/InGaAs four-junction solar cell with tunnel junctions. The cell basic physical properties were demonstrated. The simulated results indicate one-sun efficiency about 40.1% with short-circuit current density as 126.63 A/m2 and open-circuit voltage as 3.69V. High efficiency up to 45.9% under 100 sun illumination could be achieved.\",\"PeriodicalId\":369769,\"journal\":{\"name\":\"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2019.8806906\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2019.8806906","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了具有隧道结的InGaP/GaAs/InGaAs四结太阳能电池的二维(2D)模型。证明了细胞的基本物理性质。仿真结果表明，当短路电流密度为126.63 A/m2，开路电压为3.69V时，单太阳效率约为40.1%。在100次太阳照度下，效率可达45.9%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

2D Modeling of InGaP/GaAs/InGaAs Four-Junction Solar Cell

Two-dimensional (2D) modeling is reported for InGaP/GaAs/InGaAs four-junction solar cell with tunnel junctions. The cell basic physical properties were demonstrated. The simulated results indicate one-sun efficiency about 40.1% with short-circuit current density as 126.63 A/m2 and open-circuit voltage as 3.69V. High efficiency up to 45.9% under 100 sun illumination could be achieved.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

自引率

0.00%

发文量