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2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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Design Strategy for Monolithically Integrated Photodetector and Improvement using Plasmonics 单片集成光电探测器设计策略及等离子体改进
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806974
Q. Ding, S. Sant, A. Schenk
{"title":"Design Strategy for Monolithically Integrated Photodetector and Improvement using Plasmonics","authors":"Q. Ding, S. Sant, A. Schenk","doi":"10.1109/NUSOD.2019.8806974","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806974","url":null,"abstract":"We report three optimized coupling geometries for a monolithically integrated In0.53Ga0.47As pin photodetector operating at 1350 nm wavelength. It is shown how plasmonics can further improve the performance.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122490502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
NUSOD 2019 Chairs and Committees NUSOD 2019主席和委员会
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/nusod.2019.8807096
{"title":"NUSOD 2019 Chairs and Committees","authors":"","doi":"10.1109/nusod.2019.8807096","DOIUrl":"https://doi.org/10.1109/nusod.2019.8807096","url":null,"abstract":"","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131404420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deep Learning and Inverse Design in Plasmonic 等离子体中的深度学习与逆设计
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806817
J. Baxter, Antonio Calà Lesina, J. Guay, A. Weck, P. Berini, L. Ramunno
{"title":"Deep Learning and Inverse Design in Plasmonic","authors":"J. Baxter, Antonio Calà Lesina, J. Guay, A. Weck, P. Berini, L. Ramunno","doi":"10.1109/NUSOD.2019.8806817","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806817","url":null,"abstract":"Laser pulses can colour noble metals by inducing nanoparticles on their surface. The colours are linked to laser parameters and nanoparticles geometry. We apply deep learning to the direct prediction of colours from a laser parameter set or a nanoparticle particle distribution. A new method for inverse design via deep learning is also proposed to retrieve the appropriate laser parameters or nanoparticle distribution given the desired colour.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"258263 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133172349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Numerical Analysis of Quantum Plasmonic Metasuraface by Time-Dependent Density Functional Theory 量子等离子体超表面的时变密度泛函数值分析
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806774
T. Takeuchi, M. Noda, K. Yabana
{"title":"Numerical Analysis of Quantum Plasmonic Metasuraface by Time-Dependent Density Functional Theory","authors":"T. Takeuchi, M. Noda, K. Yabana","doi":"10.1109/NUSOD.2019.8806774","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806774","url":null,"abstract":"We theoretically investigate optical properties of a quantum plasmonic metasurface composed of metallic nanoparticles that are arranged in a two-dimensional matrix form with a sub-nanometer gap. We employ a time-dependent density functional theory approach to calculate optical properties of the metasurface. They show characteristic features at gap distance smaller than 0.4 nm due to the tunneling currents that flow through the gaps.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114167749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device model for intermediate band materials 中间波段材料的器件模型
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806932
Eduard C. Dumitrescu, M. Wilkins, J. Krich
{"title":"Device model for intermediate band materials","authors":"Eduard C. Dumitrescu, M. Wilkins, J. Krich","doi":"10.1109/NUSOD.2019.8806932","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806932","url":null,"abstract":"For twenty years, intermediate band (IB) materials have been developed with the goal of making high-efficiency photovoltaics, with limiting efficiencies equivalent to triple-junction devices but with simpler and potentially less expensive device designs. IB devices have yet to produce any high efficiencies. Existing devices did not optimize such parameters as their layer thicknesses, because there was no device model that could treat all the IB-specific effects, e.g., charge transport within the IB and IB-filling-dependent absorptivity and photofilling. We present Simudo, a finite element optoelectronic device model that implements these effects, in addition to treating standard semiconductors. Simudo models charge transport and generation in the conduction, valence, and a number of intermediate bands. It solves the coupled Poisson/drift-diffusion equations in two dimensions, along with self-consistent optics for IB-filling-dependent absorption. We validate this new software by benchmarking it against Synopsys Sentaurus on a pn-diode test problem, and we show excellent agreement. Simudo enables optimization of devices as well as understanding of experimental results, bringing the well-established value of device modeling semiconductors to IB systems.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124825268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The Study of Coupled-Mode Characteristics from Resonant Wavelengths Inside Fiber Grating Structure 光纤光栅结构谐振波长耦合模特性研究
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806801
Ravivudh Khun-in, Yuji Usuda, A. Bhatranand, H. Yokoi
{"title":"The Study of Coupled-Mode Characteristics from Resonant Wavelengths Inside Fiber Grating Structure","authors":"Ravivudh Khun-in, Yuji Usuda, A. Bhatranand, H. Yokoi","doi":"10.1109/NUSOD.2019.8806801","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806801","url":null,"abstract":"Partial wavelength of light traveling through an optical fiber can be filtered out as a resonant wavelength from coupled modes. The simulation by FullWAVE (Synopsys Inc.) shows the electric field distribution throughout the various periodic index difference of fiber core layer. The results show that higher periodic index difference yields the larger electric field distribution affecting lower optical power passing through the optical fiber.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130572074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Modeling of 1 Gbps Directed Optical XOR/OR Gates Using Integrated Semiconductor Ring Lasers 基于集成半导体环形激光器的1gbps定向光学异或或门的设计与建模
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806897
Arpit Khandelwal
{"title":"Design and Modeling of 1 Gbps Directed Optical XOR/OR Gates Using Integrated Semiconductor Ring Lasers","authors":"Arpit Khandelwal","doi":"10.1109/NUSOD.2019.8806897","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806897","url":null,"abstract":"A novel design of optical XOR/OR gate operating at 1 Gbps and implemented by directed logic using integrated semiconductor ring lasers is presented. The proposed design is simple to implement with no optical non-linearities required for switching operation. Modeling of proposed logic gates is performed using the rate equations for counter-propagating electric fields inside the ring lasers.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126743039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical Properties of Oxide-Confined Vertical-Cavity Surface-Emitting Lasers 氧化约束垂直腔面发射激光器的电学特性
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806920
V. Kalosha, V. Shchukin, N. Ledentsov, N. Ledentsov
{"title":"Electrical Properties of Oxide-Confined Vertical-Cavity Surface-Emitting Lasers","authors":"V. Kalosha, V. Shchukin, N. Ledentsov, N. Ledentsov","doi":"10.1109/NUSOD.2019.8806920","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806920","url":null,"abstract":"We present a comprehensive description of electrical properties of vertical-cavity surface-emitting lasers (VCSELs) based on a drift-diffusion model applied to carrie r transport in 3D multilayer semiconductor laser heterostructure with a p-n junction. We address the impact of interface grading in distributed Bragg reflectors (DBRs), modulation doping of the DBRs and surrounding layers of the quantum well (QW) as well as material-dependent carrier mobilities and recombination constants and are focused on oxide-confined GaAs/AlGaAs VC-SELs. We evaluate both depletion and diffusion capacitance and show that both contributions to the capacitance as well as the differential series resistance critically depend on the injection current and chip design such that, in general, VCSEL cannot be properly modeled by an equivalent circuit approximation. Current profiles demonstrate significant inrease of the current density at the edges of the oxide-confined aperture (current crowding) which could be supressed by a proper design.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126810129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Welcome to NUSOD 2019! 欢迎来到NUSOD 2019!
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/nusod.2019.8807014
{"title":"Welcome to NUSOD 2019!","authors":"","doi":"10.1109/nusod.2019.8807014","DOIUrl":"https://doi.org/10.1109/nusod.2019.8807014","url":null,"abstract":"","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131442206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient Optical Modeling of VCSELs using Full-Vectorial FDFD method 基于全矢量FDFD方法的vcsel高效光学建模
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806850
A. I. Nashed, M. Lestrade, Z. Q. Li, Z. Simon Li
{"title":"Efficient Optical Modeling of VCSELs using Full-Vectorial FDFD method","authors":"A. I. Nashed, M. Lestrade, Z. Q. Li, Z. Simon Li","doi":"10.1109/NUSOD.2019.8806850","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806850","url":null,"abstract":"In this paper, the FDFD is used to analyze Vertical Cavity Surface Emitting Laser (VCSEL). Based on the structure of the VCSEL, two main models can be used; the 2.5D and the 3D Finite Difference Frequency Domain (FDFD). The full vectorial solver is well suited for the fundamental as well as the higher-order modes and includes different field polarization. The method was used to solve both the reference VCSEL and the Surface-Relief VCSEL.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"30 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132812086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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