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2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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The Influence of Periodic Ultra-thin AlN Interlayers in Multiplication Region on the GaN Avalanche Photodiode 倍增区周期性超薄AlN中间层对GaN雪崩光电二极管的影响
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807045
Qian Li, Jian-bin Kang, Wangping Wang, Yongbiao Wan, Mo Li, Feiliang Chen
{"title":"The Influence of Periodic Ultra-thin AlN Interlayers in Multiplication Region on the GaN Avalanche Photodiode","authors":"Qian Li, Jian-bin Kang, Wangping Wang, Yongbiao Wan, Mo Li, Feiliang Chen","doi":"10.1109/NUSOD.2019.8807045","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807045","url":null,"abstract":"GaN APD with periodic ultra-thin AlN interlayers in multiplication region has been proposed to obtain a high gain at constant voltage mode. The influence of the AlN interlayers on the multiplication process was numerically simulated and analyzed. The results predict that the multiplication process contains three different stages with the increase of the reverse voltage. The experimental results agree with the numerically simulation very well and a high gain of 6×104 at constant voltage mode was obtained.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133285893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Model Calibration of InGaAs/InP p-I-n Test Structures InGaAs/InP p-I-n测试结构的模型校准
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807002
A. Walker, O. Pitts, C. Storey, P. Waldron
{"title":"Model Calibration of InGaAs/InP p-I-n Test Structures","authors":"A. Walker, O. Pitts, C. Storey, P. Waldron","doi":"10.1109/NUSOD.2019.8807002","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807002","url":null,"abstract":"Numerical device model calibration of InGaAs/InP double-heterostructure p-I-n junctions is performed at room temperature using guarded test structures of various areas and investigating the contributions from minority carrier diffusion, depletion region generation and finally perimeter (shunt) leakage. The perimeter leakage is determined to be 0.5 pA/cm, whereas the depletion region contributes 2.2 nA/cm2; the bulk diffusion contribution is excluded via the guard ring but can be computed analytically to be 2.0 nA/cm2. Reproducing the experimental test structures within the numerical modeling environment accurately reproduces the data based on calibrating the diffusion length and SRH lifetime.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113992180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling phase noise in high-power photodetectors 高功率光电探测器相位噪声建模
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806908
S. E. Jamali Mahabadi, T. Carruthers, C. Menyuk
{"title":"Modeling phase noise in high-power photodetectors","authors":"S. E. Jamali Mahabadi, T. Carruthers, C. Menyuk","doi":"10.1109/NUSOD.2019.8806908","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806908","url":null,"abstract":"We describe the simulation model that we use to calculate the impulse response and phase noise in a modified unitraveling carrier (MUTC) photodetector using the drift-diffusion equations while avoiding computationally expensive Monte Carlo simulations.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124494963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Directed Logic WDM-Based Scalable Optical Decoder Using Micro-Ring Resonators 基于微环谐振器的定向逻辑wdm可扩展光解码器
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806806
R. Mital, Zhoufeng Ying, Chenghao Feng, Ray T. Chen
{"title":"Directed Logic WDM-Based Scalable Optical Decoder Using Micro-Ring Resonators","authors":"R. Mital, Zhoufeng Ying, Chenghao Feng, Ray T. Chen","doi":"10.1109/NUSOD.2019.8806806","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806806","url":null,"abstract":"A novel design for an optical decoder is demonstrated in which by using the Wavelength-Division Multiplexing (WDM) property of the micro-ring resonators, we greatly simplify the design and achieve scalability to produce N-bit decoders. We designed the decoder logic using directed logic. Directed logic takes the full advantage of integrated photonics and electronics and has received lots of investigation since its introduction. The feasibility of the proposed decoder is verified through simulation.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117031375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Study of the Evanescently Coupled One-Sided Junction Waveguide Photodiode 倏逝耦合单侧结波导光电二极管的数值研究
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806990
Jie Xu, Xiupu Zhang, A. Kishk
{"title":"Numerical Study of the Evanescently Coupled One-Sided Junction Waveguide Photodiode","authors":"Jie Xu, Xiupu Zhang, A. Kishk","doi":"10.1109/NUSOD.2019.8806990","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806990","url":null,"abstract":"The one-sided junction photodiode has a simple epitaxial layer structure, while maintaining the characteristics of high speed and high output power. An evanescently coupled one-sided junction waveguide photodiode is studied numerically and presented. The waveguide photodiode with 20 μm active region length leads to a responsivity of 0.435 A/W with a simulated bandwidth of 45 GHz.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115365010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optimal design of a multichannel fiber Bragg grating by using the DC sampling method 基于直流采样法的多通道光纤布拉格光栅优化设计
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806942
Hua Zhao, Miaomiao Zhanag, Hongpu Li
{"title":"Optimal design of a multichannel fiber Bragg grating by using the DC sampling method","authors":"Hua Zhao, Miaomiao Zhanag, Hongpu Li","doi":"10.1109/NUSOD.2019.8806942","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806942","url":null,"abstract":"A novel and flexible method for producing a multichannel filter from a single-channel fiber Bragg grating (FBG) is proposed and numerically demonstrated. The proposed method enables us to produce a multichannel filter from a single channel FBG just by using the direct UV exposure without the need of the expense and the complex phase mask. Moreover, the proposed method provides much more flexibilities to design any other new kinds of fiber gratings than ever before.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114513648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Methodology for lighting optimization applied to photocatalytic reactors 应用于光催化反应器的照明优化方法
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806862
Tecilli Tapia-Tlatelpa, J. Trull, V. Sala, L. Romeral
{"title":"Methodology for lighting optimization applied to photocatalytic reactors","authors":"Tecilli Tapia-Tlatelpa, J. Trull, V. Sala, L. Romeral","doi":"10.1109/NUSOD.2019.8806862","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806862","url":null,"abstract":"Replacement of conventional UV-lamps used in photocatalytic reactors by UV-LED sources with lower energy consumption and larger versatility has been proposed recently; However, the implementation of these types of sources in these reactors has not been studied in detail. In this article a methodology is proposed to find different LED arrays, whose distributions use the least amount of elements and optimum distance between them, using uniform irradiance models that satisfy the optical needs of photocatalytic processes. Experimental results presented show that it is possible to replace sources of high-energy consumption by LED arrays adapted to the specific needs of the photocatalytic reactor obtaining excellent oxidation results.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127230562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Investigation of Electronic Properties of MoxW1–xS2 Alloy by Tight-binding Method for Interband transition MoxW1-xS2合金带间跃迁紧密结合法研究电子性能
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806790
T. Tsai, Pin-fang Chen, Shu‐Wei Chang, Yuh‐Renn Wu
{"title":"Investigation of Electronic Properties of MoxW1–xS2 Alloy by Tight-binding Method for Interband transition","authors":"T. Tsai, Pin-fang Chen, Shu‐Wei Chang, Yuh‐Renn Wu","doi":"10.1109/NUSOD.2019.8806790","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806790","url":null,"abstract":"Two dimensional (2D) materials have been popular recently due to their low-dimensional transport properties. And transition metal dichalcogenides (TMDCs) show a wide range of electronic and optical properties. In this paper, the electronic and optical properties of Mo<inf>x</inf>W<inf>1–x</inf>S<inf>2</inf> alloy such as band structure, bandgap, effective mass and absorption coefficient are modeled by sp<sup>3</sup>d<sup>3</sup> tight-binding model.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123489968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
[Copyright notice] (版权)
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/nusod.2019.8806985
{"title":"[Copyright notice]","authors":"","doi":"10.1109/nusod.2019.8806985","DOIUrl":"https://doi.org/10.1109/nusod.2019.8806985","url":null,"abstract":"","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122603585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Eigen-State Energies in Asymmetric double Quantum Wells Lattice-Matched to InP 与InP晶格匹配的非对称双量子阱本征态能量
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807016
K. Tanaka, M. Fujiwara, N. Happo, S. Takahashi
{"title":"Eigen-State Energies in Asymmetric double Quantum Wells Lattice-Matched to InP","authors":"K. Tanaka, M. Fujiwara, N. Happo, S. Takahashi","doi":"10.1109/NUSOD.2019.8807016","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807016","url":null,"abstract":"Asymmetric In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells (MQWs) were studied theoretically and experimentally. Eigen-energies of eigen-states and wave functions confined in the asymmetric MQWs were deduced from by calculation based on the transfer matrix method and optical interband transitions were obtained by photocurrent spectroscopy. Results of the calculation agree well with experimental data.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128386338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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