倏逝耦合单侧结波导光电二极管的数值研究

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI:10.1109/NUSOD.2019.8806990

Jie Xu, Xiupu Zhang, A. Kishk

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引用次数: 2

摘要

单侧结光电二极管具有简单的外延层结构，同时保持了高速和高输出功率的特性。对一种瞬变耦合单侧结波导光电二极管进行了数值研究。采用20 μm有源区长度的波导光电二极管，响应率为0.435 a /W，模拟带宽为45 GHz。

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Numerical Study of the Evanescently Coupled One-Sided Junction Waveguide Photodiode

The one-sided junction photodiode has a simple epitaxial layer structure, while maintaining the characteristics of high speed and high output power. An evanescently coupled one-sided junction waveguide photodiode is studied numerically and presented. The waveguide photodiode with 20 μm active region length leads to a responsivity of 0.435 A/W with a simulated bandwidth of 45 GHz.

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2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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