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2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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Simulation of Lateral Near- and Far-Field Profiles of Gain-Guided High-Power Semiconductor Lasers 增益制导高功率半导体激光器横向近场和远场分布的仿真
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806796
C. Holly, S. McDougall
{"title":"Simulation of Lateral Near- and Far-Field Profiles of Gain-Guided High-Power Semiconductor Lasers","authors":"C. Holly, S. McDougall","doi":"10.1109/NUSOD.2019.8806796","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806796","url":null,"abstract":"The objective of this paper is to present the simulation of the lateral emission characteristics of broad-area diode lasers by the example of two devices which differ in contact width, and demonstrate that the applied model is capable to predict far-field divergence and near-field width over current. The numerical results are compared to experimental data.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114796350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Performance Analysis of Short-Wavelength Infrared Optical Sensors 短波长红外光学传感器的性能分析
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806874
C. Flueraru, A. Walker, P. Waldron, O. Pitts
{"title":"Performance Analysis of Short-Wavelength Infrared Optical Sensors","authors":"C. Flueraru, A. Walker, P. Waldron, O. Pitts","doi":"10.1109/NUSOD.2019.8806874","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806874","url":null,"abstract":"We report in this paper our latest results on fabrication and testing of optical sensor for imaging in short-wavelength infrared regime. We are comparing the performance of our imaging sensor in two permitted regimes by the readout integrated circuit used.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126043035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First-Principle Electronic Properties of Monoclinic (AlxInyGa1-x-y)2O3 Alloys 单斜(AlxInyGa1-x-y)2O3合金的第一性原理电子性能
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806811
Xiaoli Liu, Chee-Keong Tan
{"title":"First-Principle Electronic Properties of Monoclinic (AlxInyGa1-x-y)2O3 Alloys","authors":"Xiaoli Liu, Chee-Keong Tan","doi":"10.1109/NUSOD.2019.8806811","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806811","url":null,"abstract":"First-Principle DFT calculations are carried out to investigate the electronic properties of β-(Al<inf>x</inf>In<inf>y</inf>Ga<inf>1-x-y</inf>)<inf>2</inf>O<inf>3</inf> alloys with x ranging from 0~12.5% and y ranging from 0~ 18.75%. The electronic properties of monoclinic gallium oxide alloy with added aluminium and indium atoms are explored. The incorporation of both aluminium and indium results in the reduction of energy bandgap of β-(Al<inf>x</inf>In<inf>y</inf>Ga<inf>1-x-y</inf>)<inf>2</inf>O<inf>3</inf> alloys. Additionally, indium of higher content than aluminium in the quaternary alloy promotes the indirect bandgap transferring to direct bandgap. This work provides new findings on the flexible band property modification of monoclinic gallium oxide-based material and indicates their potential in deep ultraviolet photodetector.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117087555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
NUSOD 2019 Invited Talks NUSOD 2019特邀演讲
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/nusod.2019.8807004
{"title":"NUSOD 2019 Invited Talks","authors":"","doi":"10.1109/nusod.2019.8807004","DOIUrl":"https://doi.org/10.1109/nusod.2019.8807004","url":null,"abstract":"","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115966753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modelling Bifacial Solar Energy Yield for Single-Axis Tracked Systems with Racking 带机架的单轴履带系统双面太阳能产率建模
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807097
Annie C. J. Russell, C. Valdivia, Mandy R. Lewis, J. Haysom, K. Hinzer
{"title":"Modelling Bifacial Solar Energy Yield for Single-Axis Tracked Systems with Racking","authors":"Annie C. J. Russell, C. Valdivia, Mandy R. Lewis, J. Haysom, K. Hinzer","doi":"10.1109/NUSOD.2019.8807097","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807097","url":null,"abstract":"This paper presents a bifacial PV energy yield simulation tool with highly-parameterized optical and electrical models. The resulting detailed irradiance profiles provide insight into the effects of rack shading. Horizontal parallel wiring architecture of cells in the module is found to mitigate nonuniform rear irradiance caused by torque tube shading in a single-axis tracked system for representative cloudy and clear days. Low cell shunt resistance is shown to amplify bifacial gain during low irradiance hours. Annual energy yield predictions for fixed and tracked bifacial PV systems for Ottawa, ON are also presented.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125393918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation of nanophotonic nonlinear metasurfaces 纳米光子非线性超表面的模拟
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806786
Antonio Calà Lesina, P. Berini, L. Ramunno
{"title":"Simulation of nanophotonic nonlinear metasurfaces","authors":"Antonio Calà Lesina, P. Berini, L. Ramunno","doi":"10.1109/NUSOD.2019.8806786","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806786","url":null,"abstract":"Nonlinear metasurfaces offer a new approach for nonlinear optics, with limitless design potential, very small footprints, no phase matching requirements, all with enhanced and controlled nonlinear processes. Alongside this is the need for simulation tools that can exploit this design potential and understand the properties of such devices. In this talk, we will review some of the most used methods in nonlinear nanophotonics simulations, and present some examples of such simulations of nonlinear plasmonic metasurfaces.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"175 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123721497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiscale Electrothermal Simulation of Quantum Cascade Laser Operation 量子级联激光操作的多尺度电热模拟
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806807
I. Knezevic
{"title":"Multiscale Electrothermal Simulation of Quantum Cascade Laser Operation","authors":"I. Knezevic","doi":"10.1109/NUSOD.2019.8806807","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806807","url":null,"abstract":"Quantum cascade lasers (QCLs) are high-power coherent light sources in the midinfrared and terahertz parts of the electromagnetic spectrum. They are systems in which the electronic and lattice systems are far from equilibrium, strongly coupled to one another, and the problem bridges disparate spatial scales. We present our ongoing work on the multiphysics and multiscale simulation of far-from-equilibrium transport of charge and heat in QCLs.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126577933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Numerical Analysis of Doped Plastic Optical Fibers as Sunlight Collectors for Solar Cells 掺塑光纤作为太阳能电池集热器的数值分析
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806935
J. Arrúe, B. García-Ramiro, M. Illarramendi, F. Jiménez, J. Zubía
{"title":"Numerical Analysis of Doped Plastic Optical Fibers as Sunlight Collectors for Solar Cells","authors":"J. Arrúe, B. García-Ramiro, M. Illarramendi, F. Jiménez, J. Zubía","doi":"10.1109/NUSOD.2019.8806935","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806935","url":null,"abstract":"The model and numerical results presented are mainly intended for researchers who are nowadays trying to design efficient and inexpensive solar concentrators for solar cells by using plastic optical fibers doped with suitable dyes. One issue discussed in this work is the feasibility or not of lengthening the doped fiber in order to collect more light. Another one is the feasibility of increasing the dopant concentration with the aim of favoring the absorption of the impinging sunlight. We clarify both issues, and we discuss the most suitable type of dye, by calculating the achievable electric power in each case.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114381643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enhanced semiclassical simulation of InGaN/GaN multi-quantum-well solar cells InGaN/GaN多量子阱太阳能电池的增强半经典模拟
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806934
M. Calciati, A. Tibaldi, C. D. Santi, A. Palmieri, Lorenzo Avataneo, M. Meneghini, F. Bertazzi, F. Cappelluti, M. Vallone, G. Ghione, G. Meneghesso, E. Zanoni, M. Goano
{"title":"Enhanced semiclassical simulation of InGaN/GaN multi-quantum-well solar cells","authors":"M. Calciati, A. Tibaldi, C. D. Santi, A. Palmieri, Lorenzo Avataneo, M. Meneghini, F. Bertazzi, F. Cappelluti, M. Vallone, G. Ghione, G. Meneghesso, E. Zanoni, M. Goano","doi":"10.1109/NUSOD.2019.8806934","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806934","url":null,"abstract":"This work presents an investigation on a multi-quantum-well InGaN/GaN solar cell, based on our in-house quantum-corrected drift-diffusion simulator D1ANA. Having validated our approach with a commercial simulation tool, it is now ready to provide deep insight into the carrier transport dynamics occurring in these devices, allowing comparisons with experimental results performed under different illumination conditions.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122894793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Theoretical analysis of band-to-band tunneling in highly-mismatched semiconductor alloys 高失配半导体合金带间隧穿的理论分析
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806872
C. Broderick, Sarita Das, E. O’Reilly
{"title":"Theoretical analysis of band-to-band tunneling in highly-mismatched semiconductor alloys","authors":"C. Broderick, Sarita Das, E. O’Reilly","doi":"10.1109/NUSOD.2019.8806872","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806872","url":null,"abstract":"The requirement for improved mid-infrared sensing technologies motivates the development of photodiodes displaying high signal-to-noise ratio. Key to achieving this goal is minimisation of the dark current, to which band-to-band tunneling (BTBT) contributes significantly in narrow-gap materials. We present a theoretical analysis of BTBT in narrow-gap dilute nitride semiconductor alloys, and evaluate the impact of nitrogen (N) incorporation on the BTBT current density. For low field strengths our calculations suggest the potential to reduce BTBT by exploiting the impact of N-related band-anticrossing on the complex band structure (CBS). At high fields our analysis suggests that BTBT is governed by an interplay between the impact of N incorporation on the CBS and on the conduction band edge density of states, and is approximately equal to that in a conventional narrow-gap material.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124158014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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