Enhanced semiclassical simulation of InGaN/GaN multi-quantum-well solar cells

Abstract

This work presents an investigation on a multi-quantum-well InGaN/GaN solar cell, based on our in-house quantum-corrected drift-diffusion simulator D1ANA. Having validated our approach with a commercial simulation tool, it is now ready to provide deep insight into the carrier transport dynamics occurring in these devices, allowing comparisons with experimental results performed under different illumination conditions.