InGaN/GaN多量子阱太阳能电池的增强半经典模拟

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI:10.1109/NUSOD.2019.8806934

M. Calciati, A. Tibaldi, C. D. Santi, A. Palmieri, Lorenzo Avataneo, M. Meneghini, F. Bertazzi, F. Cappelluti, M. Vallone, G. Ghione, G. Meneghesso, E. Zanoni, M. Goano

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引用次数: 1

摘要

本工作基于我们内部的量子校正漂移扩散模拟器D1ANA，对多量子阱InGaN/GaN太阳能电池进行了研究。通过商业模拟工具验证了我们的方法，现在可以深入了解这些设备中发生的载流子传输动力学，并与不同照明条件下的实验结果进行比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Enhanced semiclassical simulation of InGaN/GaN multi-quantum-well solar cells

This work presents an investigation on a multi-quantum-well InGaN/GaN solar cell, based on our in-house quantum-corrected drift-diffusion simulator D1ANA. Having validated our approach with a commercial simulation tool, it is now ready to provide deep insight into the carrier transport dynamics occurring in these devices, allowing comparisons with experimental results performed under different illumination conditions.

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来源期刊

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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