增益制导高功率半导体激光器横向近场和远场分布的仿真

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI:10.1109/NUSOD.2019.8806796

C. Holly, S. McDougall

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引用次数: 2

摘要

本文以两个接触宽度不同的器件为例，对广域二极管激光器的横向发射特性进行了模拟，并证明了所应用的模型能够预测远场发散和近场宽度随电流的变化。数值结果与实验数据进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulation of Lateral Near- and Far-Field Profiles of Gain-Guided High-Power Semiconductor Lasers

The objective of this paper is to present the simulation of the lateral emission characteristics of broad-area diode lasers by the example of two devices which differ in contact width, and demonstrate that the applied model is capable to predict far-field divergence and near-field width over current. The numerical results are compared to experimental data.

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来源期刊

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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