倍增区周期性超薄AlN中间层对GaN雪崩光电二极管的影响

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI:10.1109/NUSOD.2019.8807045

Qian Li, Jian-bin Kang, Wangping Wang, Yongbiao Wan, Mo Li, Feiliang Chen

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引用次数: 0

摘要

为了在恒压模式下获得高增益，提出了在倍增区采用周期性超薄AlN中间层的GaN APD。数值模拟和分析了AlN中间层对倍增过程的影响。结果表明，随着反向电压的增大，倍增过程包含三个不同的阶段。实验结果与数值模拟结果吻合较好，在恒压模式下获得了较高的6×104增益。

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The Influence of Periodic Ultra-thin AlN Interlayers in Multiplication Region on the GaN Avalanche Photodiode

GaN APD with periodic ultra-thin AlN interlayers in multiplication region has been proposed to obtain a high gain at constant voltage mode. The influence of the AlN interlayers on the multiplication process was numerically simulated and analyzed. The results predict that the multiplication process contains three different stages with the increase of the reverse voltage. The experimental results agree with the numerically simulation very well and a high gain of 6×104 at constant voltage mode was obtained.

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来源期刊

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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