MoxW1-xS2合金带间跃迁紧密结合法研究电子性能

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI:10.1109/NUSOD.2019.8806790

T. Tsai, Pin-fang Chen, Shu‐Wei Chang, Yuh‐Renn Wu

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引用次数: 0

摘要

二维(2D)材料由于其低维输运特性，近年来得到了广泛的应用。过渡金属二硫族化合物(TMDCs)具有广泛的电子和光学性质。本文采用sp3d3紧密结合模型对MoxW1-xS2合金的能带结构、能带间隙、有效质量和吸收系数等电子光学性能进行了模拟。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation of Electronic Properties of MoxW1–xS2 Alloy by Tight-binding Method for Interband transition

Two dimensional (2D) materials have been popular recently due to their low-dimensional transport properties. And transition metal dichalcogenides (TMDCs) show a wide range of electronic and optical properties. In this paper, the electronic and optical properties of MoxW1–xS2 alloy such as band structure, bandgap, effective mass and absorption coefficient are modeled by sp³d³ tight-binding model.

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2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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