{"title":"单片集成光电探测器设计策略及等离子体改进","authors":"Q. Ding, S. Sant, A. Schenk","doi":"10.1109/NUSOD.2019.8806974","DOIUrl":null,"url":null,"abstract":"We report three optimized coupling geometries for a monolithically integrated In0.53Ga0.47As pin photodetector operating at 1350 nm wavelength. It is shown how plasmonics can further improve the performance.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design Strategy for Monolithically Integrated Photodetector and Improvement using Plasmonics\",\"authors\":\"Q. Ding, S. Sant, A. Schenk\",\"doi\":\"10.1109/NUSOD.2019.8806974\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report three optimized coupling geometries for a monolithically integrated In0.53Ga0.47As pin photodetector operating at 1350 nm wavelength. It is shown how plasmonics can further improve the performance.\",\"PeriodicalId\":369769,\"journal\":{\"name\":\"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2019.8806974\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2019.8806974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design Strategy for Monolithically Integrated Photodetector and Improvement using Plasmonics
We report three optimized coupling geometries for a monolithically integrated In0.53Ga0.47As pin photodetector operating at 1350 nm wavelength. It is shown how plasmonics can further improve the performance.