Design Strategy for Monolithically Integrated Photodetector and Improvement using Plasmonics

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI:10.1109/NUSOD.2019.8806974

Q. Ding, S. Sant, A. Schenk

引用次数: 2

Abstract

We report three optimized coupling geometries for a monolithically integrated In0.53Ga0.47As pin photodetector operating at 1350 nm wavelength. It is shown how plasmonics can further improve the performance.

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单片集成光电探测器设计策略及等离子体改进

我们报道了在1350 nm波长下工作的单片集成In0.53Ga0.47As引脚光电探测器的三种优化耦合几何形状。它显示了等离子体如何进一步提高性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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