InGaN/GaN多量子阱输运性质的原子分析

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI:10.1109/NUSOD.2019.8806898

M. O’Donovan, M. Luisier, E. O’Reilly, S. Schulz

{"title":"InGaN/GaN多量子阱输运性质的原子分析","authors":"M. O’Donovan, M. Luisier, E. O’Reilly, S. Schulz","doi":"10.1109/NUSOD.2019.8806898","DOIUrl":null,"url":null,"abstract":"We present an atomistic analysis of transport properties of an InGaN/GaN multi-quantum well system. Our study is carried out in the combined frame of tight-binding and Non-Equilibrium Green’s Function theories. In our fully three-dimensional treatment, special attention is paid to the impact of random alloy fluctuations on the electron transmission probability. The calculations reveal that the alloy microstructure significantly impacts the transmission at least for the energetically lowest bound states in the quantum wells.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atomistic analysis of transport properties of InGaN/GaN multi-quantum well\",\"authors\":\"M. O’Donovan, M. Luisier, E. O’Reilly, S. Schulz\",\"doi\":\"10.1109/NUSOD.2019.8806898\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present an atomistic analysis of transport properties of an InGaN/GaN multi-quantum well system. Our study is carried out in the combined frame of tight-binding and Non-Equilibrium Green’s Function theories. In our fully three-dimensional treatment, special attention is paid to the impact of random alloy fluctuations on the electron transmission probability. The calculations reveal that the alloy microstructure significantly impacts the transmission at least for the energetically lowest bound states in the quantum wells.\",\"PeriodicalId\":369769,\"journal\":{\"name\":\"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2019.8806898\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2019.8806898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们提出了InGaN/GaN多量子阱系统输运性质的原子分析。我们的研究是在紧密约束和非均衡格林函数理论的结合框架下进行的。在我们的全三维处理中，特别注意合金随机波动对电子透射概率的影响。计算结果表明，合金微观结构至少对量子阱中能量最低束缚态的传输有显著影响。

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Atomistic analysis of transport properties of InGaN/GaN multi-quantum well

We present an atomistic analysis of transport properties of an InGaN/GaN multi-quantum well system. Our study is carried out in the combined frame of tight-binding and Non-Equilibrium Green’s Function theories. In our fully three-dimensional treatment, special attention is paid to the impact of random alloy fluctuations on the electron transmission probability. The calculations reveal that the alloy microstructure significantly impacts the transmission at least for the energetically lowest bound states in the quantum wells.

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2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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