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2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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Enhanced numerical design of HgCdTe MWIR HOT P+νN+ photodiodes HgCdTe MWIR HOT P+νN+光电二极管的改进数值设计
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806961
A. Jóźwikowska, R. Ciupa, O. Markowska, K. Jóźwikowski
{"title":"Enhanced numerical design of HgCdTe MWIR HOT P+νN+ photodiodes","authors":"A. Jóźwikowska, R. Ciupa, O. Markowska, K. Jóźwikowski","doi":"10.1109/NUSOD.2019.8806961","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806961","url":null,"abstract":"Various configurations of Hg1-xCdxTe heterostructures were investigated to find the best solution for MWIR non-equilibrium photodiodes. A promising solution is the use of a complementary barrier infrared detector [1] in which we can limit the impact of generation on contact areas and significantly reduce surface leakage currents. We have choose for simulation P+νN+ photodiodes structure working at 230K.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"624 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123325796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
NUSOD 2019 Author Index NUSOD 2019作者索引
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/nusod.2019.8807075
{"title":"NUSOD 2019 Author Index","authors":"","doi":"10.1109/nusod.2019.8807075","DOIUrl":"https://doi.org/10.1109/nusod.2019.8807075","url":null,"abstract":"","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"421 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133698259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Resonance Frequency in a Coupled Cavity DFB-LD with Asymmetric Grating Coupling Coefficients by Photon-Photon Resonance 基于光子-光子共振的非对称光栅耦合腔DFB-LD的高谐振频率
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806782
T. Numai
{"title":"High Resonance Frequency in a Coupled Cavity DFB-LD with Asymmetric Grating Coupling Coefficients by Photon-Photon Resonance","authors":"T. Numai","doi":"10.1109/NUSOD.2019.8806782","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806782","url":null,"abstract":"Enhancement of resonance frequency in a coupled cavity DFB-LD with asymmetric grating coupling coefficients by photon-photon resonance is reported. The resonance frequency is 61.3 GHz and the 3-dB down band width is 82.7 GHz when the injected current is only 2.5 times the threshold current.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115360170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling of Halide Perovskite/Ti3C2TX MXenes Solar Cells 卤化物钙钛矿/Ti3C2TX MXenes太阳能电池的建模
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806980
A. D. Vito, A. Pecchia, D. Rossi, M. A. der Maur, A. Agresti, S. Pescetelli, A. Pazniak, A. Carlo
{"title":"Modeling of Halide Perovskite/Ti3C2TX MXenes Solar Cells","authors":"A. D. Vito, A. Pecchia, D. Rossi, M. A. der Maur, A. Agresti, S. Pescetelli, A. Pazniak, A. Carlo","doi":"10.1109/NUSOD.2019.8806980","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806980","url":null,"abstract":"Solar cells based on metal halide Perovskites have gained a key role in the field of photovoltaics due to their high efficiencies and low production costs. Still, there is considerable effort invested in tuning the perovskite crystal morphology and interface properties, in order to further improve the device performance. Among the solutions proposed so far, MXenes have recently turned into focus for their possibility of being incorporated within the perovskite and carrier transport layers, resulting in an important improvement of the cell efficiency. In this work, we present device simulations of Perovskite/MXene solar cells, where modeling of the interface energy alignments has been based on measurement data and ab initio calculations.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"22 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128916363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Traveling Wave Model Based Simulation of Tunable Multi-Wavelength Diode Laser Systems 基于行波模型的可调谐多波长二极管激光系统仿真
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806928
J. Koester, M. Radziunas, A. Zeghuzi, H. Wenzel, A. Knigge
{"title":"Traveling Wave Model Based Simulation of Tunable Multi-Wavelength Diode Laser Systems","authors":"J. Koester, M. Radziunas, A. Zeghuzi, H. Wenzel, A. Knigge","doi":"10.1109/NUSOD.2019.8806928","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806928","url":null,"abstract":"We show simulation results of a compact, integrated and tunable multi-wavelength diode laser emitting around 785 nm. The presented design was optimized using passive waveguide simulations and then further analyzed by performing active laser simulations. The latter enables deducing critical design parameters not accessible via an all-passive simulation.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128558220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Absorption modeling with FMM, FEM and FDT 利用FMM、FEM和FDT进行吸收建模
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806882
N. Anttu, H. Mäntynen, T. Sadi, A. Matikainen, J. Turunen, H. Lipsanen
{"title":"Absorption modeling with FMM, FEM and FDT","authors":"N. Anttu, H. Mäntynen, T. Sadi, A. Matikainen, J. Turunen, H. Lipsanen","doi":"10.1109/NUSOD.2019.8806882","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806882","url":null,"abstract":"Absorption modeling is at the core of the design process of nanostructured solar cells and photodetectors. We compare the performance of three of the most popular numerical modeling methods: the Fourier modal method (FMM), the finite element method (FEM) and the finite-difference time-domain (FDTD) method. We find that the numerically most efficient method depends on the geometry of the system, as well as on which physical quantities are needed for further analysis. From our study, we will highlight the optimum choice of method for various current nanostructures. With these guidelines, we enable design optimization that would otherwise be impossible with a suboptimal method choice.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125754774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic structure and optical properties of 2D hexagonal Boron Arsenide 二维六方砷化硼的电子结构和光学性质
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806793
Mathias Rosdahl Brems, M. Willatzen
{"title":"Electronic structure and optical properties of 2D hexagonal Boron Arsenide","authors":"Mathias Rosdahl Brems, M. Willatzen","doi":"10.1109/NUSOD.2019.8806793","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806793","url":null,"abstract":"We examine the electronic structure of two-dimensional hexagonal boron arsenide using k.p theory, method of invariants, and density functional theory. The fundamental band gap occuring at the K point is 0.76 eV, however, this transition is not allowed in the dipole approximation. The conduction band at the Γ point is highly sensitive to strain or electric fields that renders transition into a metallic state possible. We investigate the optical absorption of boron arsenide and the possibilities of tuning by means of strain or electric field.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124691310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Understanding Fundamental Material Limitations to Enable Advanced Detector Design 了解基本材料限制，实现先进的探测器设计
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807083
E. Bellotti, F. Bertazzi, J. Bajaj, J. Schuster, M. Reed
{"title":"Understanding Fundamental Material Limitations to Enable Advanced Detector Design","authors":"E. Bellotti, F. Bertazzi, J. Bajaj, J. Schuster, M. Reed","doi":"10.1109/NUSOD.2019.8807083","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807083","url":null,"abstract":"This work presents the activities of the Center for Semiconductor Modelling in the area of infrared imaging devices. We outline a methodology that enables the study of large scale infrared detector arrays to quantify their optical and electrical performance. Furthermore, we present an approach to investigate the quantum mechanical transport properties of superlattice based detectors that are an emerging technology with potential applications both in commercial and defense system.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131425115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Algorithmic Design of Nanophotonic Structure 纳米光子结构的算法设计
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8807037
E. Johlin
{"title":"Algorithmic Design of Nanophotonic Structure","authors":"E. Johlin","doi":"10.1109/NUSOD.2019.8807037","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8807037","url":null,"abstract":"Algorithmic design holds promise of dramatically improving the efficiency of nanophotonic components. Herein we explore two aspects related to the configuration of evolutionary algorithms, as well as the design of new structures to enhance absorption and emission directivity of perovskite nanocrystals.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130770720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wurtzite InGaN/GaN Quantum Dots for Intermediate Band Solar Cells 中间波段太阳能电池用纤锌矿InGaN/GaN量子点
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI: 10.1109/NUSOD.2019.8806840
Luc Robichaud, J. Krich
{"title":"Wurtzite InGaN/GaN Quantum Dots for Intermediate Band Solar Cells","authors":"Luc Robichaud, J. Krich","doi":"10.1109/NUSOD.2019.8806840","DOIUrl":"https://doi.org/10.1109/NUSOD.2019.8806840","url":null,"abstract":"Wurtzite InGaN quantum dots in GaN are investigated for intermediate band solar cells. A global limiting power conversion efficiency of 44% is predicted through detailed balance calculations with full freedom of allowed subgap transitions. We consider cylindrical quantum dots, predicting band structures using an 8-band k.p model, including deformation potential and piezoelectric fields from induced lattice strain. Taking the energy levels from the k.p model as absorption cutoffs in the detailed balance calculation, we determine the best device efficiency possible as a function of indium fraction and dot size. For small dots, of size ≈ 50 Å and indium fraction ≈ 0.7, efficiencies up to 42% are in principle attainable under 1-sun illumination.","PeriodicalId":369769,"journal":{"name":"2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128715660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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