HgCdTe MWIR HOT P+νN+光电二极管的改进数值设计

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI:10.1109/NUSOD.2019.8806961

A. Jóźwikowska, R. Ciupa, O. Markowska, K. Jóźwikowski

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引用次数: 0

摘要

研究了Hg1-xCdxTe异质结构的不同构型，以寻找MWIR非平衡光电二极管的最佳方案。一个有希望的解决方案是使用一个互补的屏障红外探测器[1]，我们可以限制产生对接触区域的影响，并显着减少表面泄漏电流。我们选择了在230K下工作的P+νN+光电二极管结构进行仿真。

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Enhanced numerical design of HgCdTe MWIR HOT P+νN+ photodiodes

Various configurations of Hg1-xCdxTe heterostructures were investigated to find the best solution for MWIR non-equilibrium photodiodes. A promising solution is the use of a complementary barrier infrared detector [1] in which we can limit the impact of generation on contact areas and significantly reduce surface leakage currents. We have choose for simulation P+νN+ photodiodes structure working at 230K.

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来源期刊

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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