2D materials for optoelectronic devices

Abstract

There is currently interest in 2D transition metal dichalcogenide (TMDC) materials, MX 2 (M=Mo,W, X=S,Se,Te), for optoelectronic devices [1] , [2] , [3] . These materials, when thinned down to a single layer, are an example of atomically thin truly two dimensional direct gap semiconductors. The reduction of dimensionality is a reason for strongly enhanced electron - electron interactions, which result in optical properties at room temperature dominated by neutral and charged excitons with binding energies orders of magnitude larger than room temperature and those found in standard compound semiconductors, e.g., GaAs quantum wells.