热电冷却下T2SLs InAs/InAsSb/B-AlSb长波探测器的理论模拟

2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2019-07-01 DOI:10.1109/NUSOD.2019.8807046

P. Martyniuk, K. Michalczewski, T. Tsai, C. H. Wu, Y. R. Wu

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引用次数: 0

摘要

本文报道了基于InAs/InAsSb (xSb = 0.38) ii型超晶格在热电冷却(> 190 K)下工作的势垒长波红外nBnn+探测器，并在分析的温度范围和假设的结构中证明了AlSb在价带中的最小势垒。在温度~ 230 K时，假设浸没贡献，在~ 109 cmHz1/2/W水平下，模拟结构的最高探测率被评估为。

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Theoretical simulation of the barrier T2SLs InAs/InAsSb/B-AlSb longwave detector operating under thermoelectrical cooling

The paper reports on the barrier longwave infrared nBnn+ detector based on InAs/InAsSb (xSb = 0.38) type-II superlattice operating under thermoelectrical cooling ( > 190 K). AlSb was proved to minimize barrier in valence band in analyzed temperature range and assumed architecture. The highest detectivity of the simulated structure was assessed at the level of ~ 109 cmHz1/2/W at T ~ 230 K assuming immersion contribution.

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2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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