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14th IEEE International Conference on Nanotechnology最新文献

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Fabrication of cylindrical micro-components using laser scan lithography and electrolytic etching of stainless steel pipes 用激光扫描光刻和电解刻蚀法制备圆柱形微元件的不锈钢管
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968108
T. Horiuchi, H. Sakabe, T. Sano
{"title":"Fabrication of cylindrical micro-components using laser scan lithography and electrolytic etching of stainless steel pipes","authors":"T. Horiuchi, H. Sakabe, T. Sano","doi":"10.1109/NANO.2014.6968108","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968108","url":null,"abstract":"A new fabrication method of cylindrical micro-components was investigated using laser scan lithography and electrolytic etching. First, net-like patterns were formed by repeating delineations of helical patterns crossing each other on fine pipes of stainless steel with an outer diameter of 100 μm and a wall thickness of 20 μm. The pipes were coated with 4-μm thick negative resist, and four couples of helical patterns were delineated for making the net-like patterns. Next, the pipes were etched in an aqueous electrolyte of sodium chloride and ammonium chloride. As a result, net-like pipes with multi-holes were successfully fabricated. Etched surfaces and sidewalls were smooth, and it was verified that the new method would be applicable to fabricating various cylindrical micro-components with hundreds of nanometer range roughness and accuracy. The technology will be particularly useful for developing special syringe needles, stents for supporting damaged blood vessels, and multi-hole tools for supplying air pressure to stent balloons.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133156755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Physical modeling and analysis for performance enhancement of nanoscale silicon field-effect transistor-based plasmonic terahertz detector 纳米硅场效应晶体管等离子体太赫兹探测器性能增强的物理建模与分析
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968154
M. Ryu, Jeong Seop Lee, Kyung Rok Kim
{"title":"Physical modeling and analysis for performance enhancement of nanoscale silicon field-effect transistor-based plasmonic terahertz detector","authors":"M. Ryu, Jeong Seop Lee, Kyung Rok Kim","doi":"10.1109/NANO.2014.6968154","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968154","url":null,"abstract":"In principle, the photoresponse can be enhanced by scaling down the gate oxide thickness (tox), which is a key structural parameter for the channel 2DEG density modulation. By using our TCAD simulation framework, we found that the enhanced photoresponse by reducing tox has been originated from the increase of 2DEG density modulation by the improved subthreshold swing (SSW) of FET and the decrease of 2DEG propagation length (i.e. more asymmetric 2DEG) by degradation of the normal field-dependent channel mobility.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124806695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Multilayer Graphene-based films for strain sensing 应变传感用多层石墨烯薄膜
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6967987
A. Rinaldi, A. Proietti, A. Tamburrano, G. De Bellis, M. Mulattieri, M. S. Sarto
{"title":"Multilayer Graphene-based films for strain sensing","authors":"A. Rinaldi, A. Proietti, A. Tamburrano, G. De Bellis, M. Mulattieri, M. S. Sarto","doi":"10.1109/NANO.2014.6967987","DOIUrl":"https://doi.org/10.1109/NANO.2014.6967987","url":null,"abstract":"In this work we investigate the piezoresistive effect in multilayer graphene (MLG) based films produced by two different cost-effective techniques, spray coating and drop casting. Both techniques enable the direct deposition of the sensor over the structure to be monitored. The piezoresistive behavior of the MLG-based sensors has been investigated experimentally by measuring the variation of the electrical resistance during three point bending tests. The sensor response has been stabilized through an optimized mechanical treatment. The obtained results show that the produced sensors are characterized by a gauge factor in the range 20-50 at very small strains (i.e. below 0.2%).","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123078076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
High-rate lithium-ion battery anodes based on silicon-coated vertically aligned carbon nanofibers 基于硅涂层垂直排列碳纳米纤维的高速锂离子电池阳极
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6967967
S. Klankowski, G. P. Pandey, B. Cruden, Jianwei Liu, Judy Z. Wu, R. A. Rojeski, Jun Li
{"title":"High-rate lithium-ion battery anodes based on silicon-coated vertically aligned carbon nanofibers","authors":"S. Klankowski, G. P. Pandey, B. Cruden, Jianwei Liu, Judy Z. Wu, R. A. Rojeski, Jun Li","doi":"10.1109/NANO.2014.6967967","DOIUrl":"https://doi.org/10.1109/NANO.2014.6967967","url":null,"abstract":"A multiscale hierarchical lithium-ion battery (LIB) anode composed of Si shells coaxially coated on vertically aligned carbon nanofibers has been explored. A high Li storage capacity of ~3,000-3,500 mAh (gSi)-1 and > 99% Coulombic efficiency have been obtained. Remarkable stability over 500 charge-discharge cycles have been demonstrated. Particularly, this electrode present a high-rate capability that the capacity remains within ~7% as the C-rate was increased from ~C/10 to ~8C. Electron microscopy, Raman spectroscopy and electrochemical impedance spectroscopy revealed that the electrode structure remains stable during long cycling. This high-rate property is likely associated with the unique nanocolumnar microstructure of Si in the shell. It reveals an exciting potential to develop high-performance LIBs.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130725151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High conformity sidewall ZnO nanorods via hydrothermal method 水热法制备高整合度侧壁ZnO纳米棒
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968006
Yuzhong Lin, Hao-Yu Wu, Yu-Wen Cheng, Ching-Fuh Lin
{"title":"High conformity sidewall ZnO nanorods via hydrothermal method","authors":"Yuzhong Lin, Hao-Yu Wu, Yu-Wen Cheng, Ching-Fuh Lin","doi":"10.1109/NANO.2014.6968006","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968006","url":null,"abstract":"High conformity sidewall ZnO nanorods are manufactured on etched Si by hydrothermal method. The temperature is fixed at 90 degree Celsius. The morphology of ZnO nanorods is examined by scanning electron microscopy. Also, the results show that we successfully spin coat ZnO seed layer on the sidewalls of grooves. Moreover, ZnO nanorods are grown in grooves of etched Si substrate.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127514534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum blind signature based on quantum circuit 基于量子电路的量子盲签名
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968020
Tien-Sheng Lin, Yanlin Chen, Ting-Hsu Chang, Chin-Yung Lu, S. Kuo
{"title":"Quantum blind signature based on quantum circuit","authors":"Tien-Sheng Lin, Yanlin Chen, Ting-Hsu Chang, Chin-Yung Lu, S. Kuo","doi":"10.1109/NANO.2014.6968020","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968020","url":null,"abstract":"Quantum circuit is a reversible circuit that can be designed the control module to derive the correlation between quantum input sequence and quantum output sequence. In addition, in this paper we use the control module of the quantum circuit to verify the equivalence of the quantum state such that quantum blind signature can achieve the security requirement of the signature scheme and resist eavesdropping from the outsider. The core concept of the proposed signature is based on the correlation of quantum entangled state to investigate that the message string and the signatory string is consistent. In regard to the security, the blindness and the failure of eavesdropping can be preserved by this work. The proposed signature can achieve impossibility of forgery and impossibility of disavowal.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126683333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Charging effects on SOI based NEMS by the example of a nanoscale Thermal-Time-of-Flight (TToF) sensor 以纳米级热飞行时间(TToF)传感器为例，研究了SOI基NEMS的充电效应
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968033
S. Ebschke, M. Wieker, J. Gerwinn, A. Loechte, K. Kallis, H. Fiedler
{"title":"Charging effects on SOI based NEMS by the example of a nanoscale Thermal-Time-of-Flight (TToF) sensor","authors":"S. Ebschke, M. Wieker, J. Gerwinn, A. Loechte, K. Kallis, H. Fiedler","doi":"10.1109/NANO.2014.6968033","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968033","url":null,"abstract":"By the use of novel techniques like Silicon-on-insulator (SOI) wafer and electron beam lithography (EBL), the development of new types of NEMS-sensors, like a nanoscale Thermal-Time-of-Flight (TToF) sensor, are possible. While scaling the dimensions to a nanoscale level, new side effects will become non neglectable. Within the research and development of a nanoscale TToF sensor such a side effect has been discovered. It shows that the charging of the buried oxide, while applying a voltage to the nano diodes, has an important impact on the characteristics of this kind of sensor. The significance of this effect and its impact on this type of sensor and similar sensors will be shown within this paper.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114392145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Model for nano-scale bonding wires under thermal loading 热载荷下纳米级键合线的模型
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968140
M. Eltaher, M. Khater, E. Abdel-Rahman, M. Yavuz
{"title":"Model for nano-scale bonding wires under thermal loading","authors":"M. Eltaher, M. Khater, E. Abdel-Rahman, M. Yavuz","doi":"10.1109/NANO.2014.6968140","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968140","url":null,"abstract":"In a companion paper, we studied the behavior of thick bonding wires under thermal loading and found good wire performance at elevated temperatures. This study extends the previous work to explore analyitcally the static stability of nano-scale bonding wires under thermal loading. Eringen nonlocal model is used to introduce nano-scale effects into Euler-Bernoulli beam theory, which is then employed to describe the wire response. Critical buckling loads and the amplitude of the static post-buckling nonlinear response are obtained. Numerical results show that taking the nano-scale effects into account leads to lower estimates of wire stiffness and buckling loads.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114527399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Si (100) and Si (311) - A comparative study for nanofabrication Si(100)和Si(311) -纳米制造的比较研究
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968099
N. Moldovan, R. Divan
{"title":"Si (100) and Si (311) - A comparative study for nanofabrication","authors":"N. Moldovan, R. Divan","doi":"10.1109/NANO.2014.6968099","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968099","url":null,"abstract":"Bulk micromachining was mainly developed for Si (100) and Si (110) wafers and is based on crystallographic etching of silicon in KOH and other basic solutions, in order to obtain useful 3-dimensional structures. Recently, Si (311) joined the group of useful substrates for nanomanufacturing, but a thorough description of its capabilities was not yet reported. The hereby study investigates the particularities of crystal-orientation dependent etching of Si (311) wafers in comparison with Si (100) in some of the most popular solutions used for etching. By that, the experimental study adds to the base of knowledge of Si anisotropic etching and diversifies its capabilities. Of particular interest is Si (311)'s capability to form V-grooves of three-faceted pyramid shape, useful for forming wedge-free tips for subsequent molding, which can be exploited to form tips with sub-10 nm apex radii.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114765575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Evaluation of quality factors in superconductor microresonators with proximity enhancement 具有接近增强的超导体微谐振器质量因子的评价
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968001
Yong-Chao Tang, O. Benningshof, H. R. Mohebbi, David G. Cory, G. Miao
{"title":"Evaluation of quality factors in superconductor microresonators with proximity enhancement","authors":"Yong-Chao Tang, O. Benningshof, H. R. Mohebbi, David G. Cory, G. Miao","doi":"10.1109/NANO.2014.6968001","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968001","url":null,"abstract":"The quality factor of microstrip line resonators made of 20/50/20 nm Nb/NbN/Nb trilayer films has been calculated as microwave transmission through the cascade of three single layers, and in agreement with experimental data. Each layer is evaluated with an explicit extended Zimmermann expression. The formula is generalized from the standard expression by including electron mean free path and the imaginary part of the gap energy of the material [1]. The quality factor of the microresonator consisting of a 50 nm thick single layer Nb film is also calculated by this compact expression and quantitatively agrees with the measured results as well. The quality factor of the microresonator made of trilayer films is shown to be larger than that of the microresonator with only a single Nb film.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121596277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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