M. Griep, R. Tay, T. Tumlin, G. Mallick, S. H. Tsang, Ram Sevak Singh, E. Teo, S. Karna
{"title":"Surface energy controlled growth of single crystalline two-dimensional hexagonal (h)-boron nitride","authors":"M. Griep, R. Tay, T. Tumlin, G. Mallick, S. H. Tsang, Ram Sevak Singh, E. Teo, S. Karna","doi":"10.1109/NANO.2014.6968067","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968067","url":null,"abstract":"Two-dimensional (2D) nanomaterials, including graphene and boron nitride (BN), have been of intense interest in recent years due to their exceptional electronic, thermal, and mechanical properties. Tailoring these novel properties to their maximum potential requires precise control of the atomic layer growth process. In recent years, catalytic growth of 2-D nanomaterials using chemical vapor deposition (CVD) process has emerged as an attractive approach due to their low-cost, scalability, and ability to transfer the grown materials on various substrates. In this approach, the morphology and purity of the catalytic surface plays a critical role on the shape, size, and growth kintectics of the 2D nanomaterial. In this work, we present the results of our systematic studies of the role of catalytic surface morphology on the shape and domain size of CVD grown hexagonal (h)-BN films. The present work clearly demonstrates that the presence of surface roghness in the form of ridges leads to a preferential growth of small-domain triangular BN sheets. A 100-fold reduction in the surface roughness leads to increased domain BN triangles, eventually transitioning to large-domain hexagonal shaped BN sheets.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116982899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Frechette, C. Vanga-Bouanga, I. Preda, F. Gao, R. Nigmatullin
{"title":"Difficulty with in situ reduction of graphene oxide in epoxy composite: A potential solution","authors":"M. Frechette, C. Vanga-Bouanga, I. Preda, F. Gao, R. Nigmatullin","doi":"10.1109/NANO.2014.6968165","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968165","url":null,"abstract":"Graphene Oxide (GO) was prepared and dispersed in DER 332 epoxy. Preliminary work using Broadband Dielectric Spectroscopy (BDS) has shown that the epoxy and its composite could start to degrade at temperature as low as 120°C. Thermogravimetric analysis measurement indicated a slight mass loss difference at 150°C between samples with and without GO. Both samples as produced were initially post-treated at 100°C for 24 h. Then, the thus-prepared samples were submitted to consecutive thermal steps (Tmax = 150°C and step duration at Tmax ~ 15 min), and monitored using BDS. A limit on the number of thermal steps that could be applied, was established before degradation/deformation of the samples occurred. When the AC conductivity at 20°C was compared before and after the complete thermal treatment, it was found that 1 wt% of GO may bring an increase in the conductivity by a factor of about 50. In addition, there is a cumulative effect of the thermal steps translating into a linear continuous increase of the electrical conductivity of the epoxy/GO, reaching as much as 20%.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121307263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nano-media: New nano-photofabric for rapid imprinting of color images and covert data storage","authors":"Hao Jiang, Reza Qarehbaghi, B. Kaminska","doi":"10.1109/NANO.2014.6968172","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968172","url":null,"abstract":"We present the concept of `nano-media' as a novel carrier to imprint and display color images with embedded covert information. The key novelty of the proposed nanoscale technology is (1) the introduction of nano-substrate such as polymer (plastic), paper, glass, metal, or other tissue/fabric and (2) the imprinting processes. Nano-substrate consists of the pixelated nano-structures that are specially designed to display red, green and blue primary colors, and infrared radiation, and can be pre-fabricated on any substrate. The imprinting process activates the pixels according to the desired image that is transferred onto nano-substrate. The effective optical intensity of the pixelated nano-structures is tuned by an intensity control layer (ICL), which is patterned according to the desired color image and covert information. Using this technology, any given full-color image and/or covert data can be embedded on a prefabricated nano-substrate. This new technology makes possible to practically and efficiently use the nano-structures as a visual information display (next generation of holography) and as an high density and long term optical storage medium. In this paper, the concept, the design of the nano-media and the proof-of-concept experimental work are presented. We successfully produced full-color images with 1,270 pixels per inch (PPI) resolution using various ICLs on the fabricated nano-substrate. We also embedded covert information into the nano-media by patterning the intensity of infrared sub-pixels and successfully read the information using an infrared camera device. The texts, QR codes and photos were all tested as the covert information which was retrieved without any loss. The color images and stored data are of very high quality that can be controlled by the imprinting processes.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127521695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Memristor memory trade-offs and design considerations","authors":"S. Smaili, Y. Massoud","doi":"10.1109/NANO.2014.6968147","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968147","url":null,"abstract":"The continuous demand for high storage capacities in modern electronic systems has made it more than ever important to find memory technologies beyond CMOS that are able to cope with the challenges at the nanoscale while catering to the requirements of high performance and robust operation. Memristors are excellent candidates for post CMOS memories, owing to their nanoscale nature and their programmability and ability to retain their state when turned off. In this paper we present design considerations for memristor memories for robust operation and discuss the trade-off between reading operations, refresh rates, and writing, stemming from the inherent variability of the memristor state when read.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124881686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bo Song, N. Xi, Zhiyong Sun, Ruiguo Yang, Liangliang Chen, Hongzhi Chen
{"title":"Controllable electrical breakdown of multiwall carbon nanotubes","authors":"Bo Song, N. Xi, Zhiyong Sun, Ruiguo Yang, Liangliang Chen, Hongzhi Chen","doi":"10.1109/NANO.2014.6968133","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968133","url":null,"abstract":"Controllable electrical breakdown of multiwall nanotubes (MWNTs) is studied utilizing the atomic force microscopy (AFM). Electrical breakdown has been known as the way to fundamentally understand the electrical properties of nanotubes and an approach to develop MWNT based transistors and sensors. Normally, electrical breakdown was known to be happened in the center of MWNT because of the thermal accumulation. However, considering the effect of thermal dissipation, the electrical breakdown could be mechanically controlled by an additional heat sink, which could be the substrate of MWNT device. Therefore, the electrical breakdown process is controllable through controlling Joule heating and thermal dissipation. In this research, we study the crucial factors that affect the electrical breakdown. The AFM based nano robot is used to measure the conductance distribution, and manipulate the three dimensional structure of MWNT in order to change the position of heat sink to control the location where electrical breakdown happened. The controllable electrical breakdown is an alternative approach for conducting bandgap engineering in nanodevice and fabricating high performance nano sensors and transistors.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125376934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuantao Ji, Qiang Li, Yong-Chao Tang, Lin Li, G. Miao
{"title":"Epitaxial growth of NaCl on Fe (100) and characterization of Fe/NaCl/Fe magnetic tunnel junctions","authors":"Yuantao Ji, Qiang Li, Yong-Chao Tang, Lin Li, G. Miao","doi":"10.1109/NANO.2014.6968095","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968095","url":null,"abstract":"Growth of NaCl and Fe/NaCl/Fe Magnetic tunneling junctions on Si (100) has been achieved by using a high vacuum electron-beam deposition system. Epitaxial tunnel junctions turn out to be prone to pinholes as well as electrode oxidation. Instead, the best tunneling magnetoresistance we have achieved in this system is on polycrystalline tunnel barriers with thin Mg insertion, and reaching 22.3% at room temperature.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122335274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gabriel Brown, S. U. Omar, S. Shetu, A. Uddin, T. Rana, H. Song, T. Sudarshan, G. Koley, M. Chandrashekhar
{"title":"High gain bipolar photo-transistor operation in graphene/SiC Schottky interfaces: The role of minority carriers","authors":"Gabriel Brown, S. U. Omar, S. Shetu, A. Uddin, T. Rana, H. Song, T. Sudarshan, G. Koley, M. Chandrashekhar","doi":"10.1109/NANO.2014.6968181","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968181","url":null,"abstract":"We propose a new class of semiconductor transistor devices based on graphene/SiC and graphene/Si Schottky junctions that have the potential to be transformative. By using the graphene as collector/emitter in a bipolar transistor (BJT) and not as a channel material, there is relaxation of the tolerances in graphene thickness and quality, simplifying growth, device design and fabrication. This also enables the exploitation of engineered defects in thicker (2-5ML) graphene films for flexible electronics, currently not being considered, as well controlled uniform defects are preferred to localized random defect clusters. We will discuss an SiF4 based growth method that enables temperature programmed defect engineering. We will discuss the use of electron-beam induced current (EBIC) to characterize these materials. Based on recent results at our lab, a graphene/SiC Schottky junction behaves as a collector (GC) and an emitter (GE) in a BJT with common emitter gain, β>50, measured under phototransistor operation mode. The transparent graphene Schottky collector/emitter junction enables opto-electronic applications, minimizes series resistance in the device due to the thin graphene layer, and also minimizes charge storage time (diffusion capacitance), enabling high speed operation. Furthermore, the observation of β>50 with a GE-BJT demonstrates that significant minority carrier injection occurs in these Schottky junctions, contrary to what is commonly assumed. The injection of minority carriers has the ability to induce conductivity modulation in the underlying semiconductor, reducing overall device resistance. The role of minority carriers in Schottky Junctions will be discussed.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116595267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Integrated nanotechnology, electronics and microsystems: Sensing paradigms and transformative MEMS technologies","authors":"I. Puchades, L. Fuller, S. Lyshevski","doi":"10.1109/NANO.2014.6968073","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968073","url":null,"abstract":"We document transformative research, practical engineering solutions and enabling sensing technologies. Microsystems integrate nanotechnology, microelectronics and micromachining. Micro-electromechanical systems (MEMS) are used in various applications. In aerospace, automotive, energy, manufacturing, medical, naval and other systems, autonomous MEMS measure physical quantities, process the data, transmit information and ensure control. Acceleration, electromagnetic fields, flow rate, position, pressure, temperature, velocity, viscosity and other physical quantities can be measured. MEMS enable biotechnology and medicine. Microsystems measure impurities, analyse bio and chemical compositions of liquids and gasses, perform DNA profiling, analyse genes and proteins, etc. Using recent nanotechnology-enabled solutions, we use application-specific nanostructured sensing materials and fabrics. A consistent device-level integration of nanostructured materials and nanoscaled microelectronic is ensured. Modular MEMS include self-sustainable energy sources, energy storage solution and energy management. We design, fabricate, test and characterize functional autonomous microsystems.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116851354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Vermeer, E. Berenschot, E. Sarajlic, N. Tas, H. Jansen
{"title":"Fabrication of novel AFM probe with high-aspect-ratio ultra-sharp three-face silicon nitride tips","authors":"R. Vermeer, E. Berenschot, E. Sarajlic, N. Tas, H. Jansen","doi":"10.1109/NANO.2014.6967957","DOIUrl":"https://doi.org/10.1109/NANO.2014.6967957","url":null,"abstract":"In this paper we present the wafer-scale fabrication of molded AFM probes with high aspect ratio ultra-sharp three-plane silicon nitride tips. Using (111) silicon wafers a dedicated process is developed to fabricate molds in the silicon wafer that have a flat triangular bottom surface enclosed by three {111} side planes. By conformally coating the mold with a sufficient thick layer, the mold is sharpened, removing the flat bottom surface in the silicon mold, leaving a mold ending in three {111} side planes, which always intersect in a point. This ultimately results in AFM probes with tetrahedral tips consisting of three planes, thus the tips have ultra sharp apexes. We used silicon nitride to mold the probes in order to obtain more wear resistant probes compared with commonly used silicon. Inspection of the fabricated tips shows a tip radius of less than 4 nm.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128638353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Robbiano, A. Abdellah, L. Santarelli, A. Falco, Sara El-Molla, L. Titova, D. Purschke, F. Hegmann, F. Cacialli, P. Lugli
{"title":"Analysis of sprayed Carbon nanotube films on rigid and flexible substrates","authors":"V. Robbiano, A. Abdellah, L. Santarelli, A. Falco, Sara El-Molla, L. Titova, D. Purschke, F. Hegmann, F. Cacialli, P. Lugli","doi":"10.1109/NANO.2014.6968021","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968021","url":null,"abstract":"We report on the morphological, electrical and optical characteristics of Carbon nanotube (CNT) films on different transparent substrates, obtained using spray deposition. The effect of different substrate materials on the characteristics of spayed CNT films with varying thickness is investigated. While film morphology is shown to depend on the underlying surface characteristics, no significant changes in work function are observed. These results are compared to films deposited onto flexile substrates. Further, time-resolved THz spectroscopy reveals picosecond transient photoconductivity dynamics in sprayed CNT films on flexible PET substrates.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129254401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}