忆阻存储器的权衡和设计考虑

S. Smaili, Y. Massoud
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引用次数: 0

摘要

现代电子系统对高存储容量的持续需求使得寻找超越CMOS的存储技术变得比以往任何时候都更加重要,这些技术能够应对纳米级的挑战,同时满足高性能和稳健操作的要求。忆阻器是后CMOS存储器的优秀候选者,因为它们具有纳米级的性质和可编程性,并且在关闭时能够保持其状态。在本文中,我们提出了稳健操作的记忆存储器的设计考虑因素,并讨论了读取操作,刷新率和写入之间的权衡,源于读取时记忆存储器状态的固有可变性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Memristor memory trade-offs and design considerations
The continuous demand for high storage capacities in modern electronic systems has made it more than ever important to find memory technologies beyond CMOS that are able to cope with the challenges at the nanoscale while catering to the requirements of high performance and robust operation. Memristors are excellent candidates for post CMOS memories, owing to their nanoscale nature and their programmability and ability to retain their state when turned off. In this paper we present design considerations for memristor memories for robust operation and discuss the trade-off between reading operations, refresh rates, and writing, stemming from the inherent variability of the memristor state when read.
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