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Thin Film Physics and Applications最新文献

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Deposition by laser ablation and properties of 0.6Pb(Mg1/3Nb2/3)O3-0.4PbTiO3 films 激光烧蚀沉积0.6Pb(Mg1/3Nb2/3)O3-0.4PbTiO3薄膜及其性能
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300704
Y. Matsumuro, Y. Oishi, M. Okuyama
{"title":"Deposition by laser ablation and properties of 0.6Pb(Mg1/3Nb2/3)O3-0.4PbTiO3 films","authors":"Y. Matsumuro, Y. Oishi, M. Okuyama","doi":"10.1117/12.300704","DOIUrl":"https://doi.org/10.1117/12.300704","url":null,"abstract":"Lead magnesium niobate titanate, 0.6Pb(Mg1/3Nb2/3)O3-0.4PbTiO3 (PMN-PT) thin films have been prepared on MgO crystal and Pt sheet at low temperatures of 450 - 600 degrees Celsius by laser ablation method. PMN-PT thin films have preferential orientation of a-axis on MgO(100) and have (100), (200) and (110) orientations on Pt. Surface morphology of PMN-PT films on Pt has the spherical grain of size 100 - 200 nm. Dielectric constants of 0.6PMN-0.4PT thin films is about 940 at 1 MHz and room temperature.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126530822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electromigration performance improvement of Al-Si-Cu/TiN/Ti/n+Si contact Al-Si-Cu/TiN/Ti/n+Si触点电迁移性能的改善
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300685
Gang Shi, Zhenze Sun, Geng-fu Xu, Yun-Hao Min, Jun Luo, Yo-Shan Lu, Bingzong Li, X. Qu, Gang Qian, M. Doan, E. Lee
{"title":"Electromigration performance improvement of Al-Si-Cu/TiN/Ti/n+Si contact","authors":"Gang Shi, Zhenze Sun, Geng-fu Xu, Yun-Hao Min, Jun Luo, Yo-Shan Lu, Bingzong Li, X. Qu, Gang Qian, M. Doan, E. Lee","doi":"10.1117/12.300685","DOIUrl":"https://doi.org/10.1117/12.300685","url":null,"abstract":"In this study, two different processes, with and without rapid thermal annealing (RTA), have been compared for the Al-Si- Cu/TiN/Ti multilayer contact on n+ diffusions. A series of wafer level reliability (WLR) measurement performed on a test structure with two 1.08 X 1.08 micrometer2 contacts on n+ diffusion. The results show that RTA can increase contact electromigration (EM) lifetime dramatically. The XRD, AES and TEM analysis indicate that this improvement is attributed to oxygen stuffing in TiN, phase change of TiN and TiSi2 formation at the interface of Ti and Si.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126531654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin film technologies for micro-opto-electro-mechanical system applications 薄膜技术在微光电机械系统中的应用
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300639
Yi-xin Chen
{"title":"Thin film technologies for micro-opto-electro-mechanical system applications","authors":"Yi-xin Chen","doi":"10.1117/12.300639","DOIUrl":"https://doi.org/10.1117/12.300639","url":null,"abstract":"The combination of micro-optics and integrated optics with microelectronics and micromechanics to create a broader class of micro-opto-electro-mechanical system (MOEMS), various thin films and related technologies such as the bulk and surface micromachining and LIG technology for the elementary structures and devices of MEOMS are discussed.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124578413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Protective coatings for large-sized KDP crystals 大尺寸KDP晶体的保护涂层
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300645
Weiqing Zhang, Yongxing Tang, Xiaolin Liu, M. Jiang, Yueqin Le, Jinren Sun, Zhiya Chen
{"title":"Protective coatings for large-sized KDP crystals","authors":"Weiqing Zhang, Yongxing Tang, Xiaolin Liu, M. Jiang, Yueqin Le, Jinren Sun, Zhiya Chen","doi":"10.1117/12.300645","DOIUrl":"https://doi.org/10.1117/12.300645","url":null,"abstract":"Large size potassium dihydrogen phosphate (KDP) crystals were coated with a polymethyltriethoxysilane (PMTES) coating for environmental protection. The optical property and environmentally protective ability of coatings are investigated. The coatings have high transmission in the range of 200 to 1100 nm. On the conditions of wavelength 1.054 micrometer and a pulse length 1 ns, the laser damage threshold of the coating is higher than 8.4 J/cm2. It is found that the thresholds of the coatings are not obvious change below 80 degrees Celsius and increase with the increasing of the cured temperature. The fogging phenomenon of the KDP crystals coated with PMTES coating has not been observed after more than one year in ambient atmosphere.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115818646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
LPE growth of ultrathin InGaAsP layer 超薄InGaAsP层的LPE生长
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300722
B. Bo, B. Zhu, Baoshun Zhang, Xingde Zhang
{"title":"LPE growth of ultrathin InGaAsP layer","authors":"B. Bo, B. Zhu, Baoshun Zhang, Xingde Zhang","doi":"10.1117/12.300722","DOIUrl":"https://doi.org/10.1117/12.300722","url":null,"abstract":"The LPE growth characteristics of ultra-thin quaternary InGaAsP alloy on GaAs substrate with different sliding speeds and various graphite growth cells has been described. The properties of grown layer are charactered by SEM, photoluminescence spectrum and x-ray diffractometer. Ten to fifty nm InGaAsP layer can be easily obtained and the FWHM of PL spectrum is about 14 mev at 10 K.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125447816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preparation and short-wavelength optical storage properties of Ge-Te alloy phase change thin film Ge-Te合金相变薄膜的制备及其短波光存储性能
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300711
Huiyong Liu, F. Jiang, L. Men, Z. Fan, F. Gan
{"title":"Preparation and short-wavelength optical storage properties of Ge-Te alloy phase change thin film","authors":"Huiyong Liu, F. Jiang, L. Men, Z. Fan, F. Gan","doi":"10.1117/12.300711","DOIUrl":"https://doi.org/10.1117/12.300711","url":null,"abstract":"The preparation method and short-wavelength optical storage properties of Ge-Te alloy phase change thin film are reported. The film was prepared by rf-sputtering technology. The deposited films were amorphous. The crystallization temperature was 190 degrees Celsius. The optical spectrum measurements showed that the reflectivity of the crystalline state film was rather high -- about 50% at 780 nm, which may be suitable for CD-E storage medium. A static optical recording tester with a focused Argon laser beam (514.5 nm) irradiating on the films was used to evaluate the optical storage performance of the films. The results showed that a rather large reflectivity contrast (larger than 15%) can be obtained at low power beam.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127977050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pulsed laser scanning deposition of diamondlike thin films 脉冲激光扫描沉积类金刚石薄膜
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300671
You-qing Wang, Qiulang Wang, C. An, B. Su
{"title":"Pulsed laser scanning deposition of diamondlike thin films","authors":"You-qing Wang, Qiulang Wang, C. An, B. Su","doi":"10.1117/12.300671","DOIUrl":"https://doi.org/10.1117/12.300671","url":null,"abstract":"Diamondlike thin films were prepared by irradiation of high purity graphite with a high power density( 1.178 x I 09 Watt I cm2 ) laser (XeCI 308 nm) in the vacuum ( I x 10-s Torr) . Raman spectra show the thin film with the properties of diamond, the scatter peak is in round 1330 cm-1 . The IR spectra show the thin film containing C-H bonds, and the ratio ofH to C is about 45%. The resistivity and optical energy gap of the thin film are 1.89 x 106 .0 .cm and 1.55 e. V, respectively. Keywords: Pulsed Laser deposition, Diamondlike thin film, Raman spectra.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132772020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Phosphorous-doped hydrogenated nanocrystalline silicon film prepared by PECVD PECVD法制备掺磷氢化纳米晶硅膜
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300678
Ming Liu, Zi-Ou Wang, Yingcong Pang, Yuliang L. He, Xinliu Jiang
{"title":"Phosphorous-doped hydrogenated nanocrystalline silicon film prepared by PECVD","authors":"Ming Liu, Zi-Ou Wang, Yingcong Pang, Yuliang L. He, Xinliu Jiang","doi":"10.1117/12.300678","DOIUrl":"https://doi.org/10.1117/12.300678","url":null,"abstract":"Phosphorous-doped nano-crystalline silicon films have been prepared by plasma enhanced chemical vapor deposition (PECVD) system. Detailed results on dark electrical conductivity, Raman spectra, infrared absorption spectra, hydrogen content are presented. The doped sample's grain size and its volume fraction is little related to doped concentration, whereas, the room-temperature conductivity of doped samples changed as doped concentration increased from 10-4 - 10-1; its value can reach to maximum value of 3.57 (Omega) -1 cm-1 when PH3/SiH4 equals 2 X 10-2. The conductivity activation energy of doped sample is smaller than that of undoped nc-Si:H film and hydrogen content is about 10 - 15%, also smaller than that of nc-Si:H film.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"183 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133349335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Technology of ultrathin films for ion-preventive feedback 离子预防反馈超薄膜技术
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300701
D. Jiang, Jingquan Tian, Guo-Jun Liu, Yaohua Lu, Ye Li, L. Fu, Guifen Wang
{"title":"Technology of ultrathin films for ion-preventive feedback","authors":"D. Jiang, Jingquan Tian, Guo-Jun Liu, Yaohua Lu, Ye Li, L. Fu, Guifen Wang","doi":"10.1117/12.300701","DOIUrl":"https://doi.org/10.1117/12.300701","url":null,"abstract":"This paper introduces the materials and structure as well as the forming method of ultrathin films for ion-preventative feedback. The characteristics and measuring results are given. In the meantime, preliminary analysis and discussion are carried out.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133763635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence and photoconductivity of polymer/C60 combination films 聚合物/C60复合膜的光致发光和光电导率
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300684
J. Qian, F. Shan, S. Qian, X. Huang
{"title":"Photoluminescence and photoconductivity of polymer/C60 combination films","authors":"J. Qian, F. Shan, S. Qian, X. Huang","doi":"10.1117/12.300684","DOIUrl":"https://doi.org/10.1117/12.300684","url":null,"abstract":"Photoluminescence (PL), time-resolved photoluminescence (TRPL) and photoconductivity (PC) measurements were used to investigate the excitation transfer (ET) and charge transfer (CT) processes occurring in the poly(N- vinylcarbazole)(PVK)/C60 and poly(2-methoxy-5-(4-bromo- butoxy) phenylene vinylene)(MBB-PPV)/C60 combination films. The transferring excitation energy from the excited states of polymers to C60, PL intensity quenching and lifetime shortening of polymers were observed from PL and TRPL measurement while great enhancement in PC measurement of multilayer polymer/C60 film was also obtained.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131881749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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