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Thin Film Physics and Applications最新文献

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Microstructural observation of short-wavelength recorded spots of phase-change thin film by atomic force microscopy 原子力显微镜对相变薄膜短波记录光斑的显微结构观察
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300714
L. Men, Huiyong Liu, F. Jiang, F. Gan, Jielin Sun, Min‐qian Li
{"title":"Microstructural observation of short-wavelength recorded spots of phase-change thin film by atomic force microscopy","authors":"L. Men, Huiyong Liu, F. Jiang, F. Gan, Jielin Sun, Min‐qian Li","doi":"10.1117/12.300714","DOIUrl":"https://doi.org/10.1117/12.300714","url":null,"abstract":"GeSb2Te4 phase change thin film was prepared by rf- magnetron sputtering method. Atomic force microscopy (AFM) was used to study the micro-structure of short-wavelength recorded spots. Microarea morphology images show that the recorded domain bulge after laser irradiation. With the increasing of writing pulse width, depression appears in the center of recorded spot. It is demonstrated that AFM is a very useful tool to evaluate the recorded spots and improve the performance of phase change media.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"351 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134364797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interface adhesion comparison of ZnS, SiO2 and Ag thin films deposited by vacuum coating method 真空镀膜法制备ZnS、SiO2和Ag薄膜界面附着力比较
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300661
P. Zhu, Hao Ren
{"title":"Interface adhesion comparison of ZnS, SiO2 and Ag thin films deposited by vacuum coating method","authors":"P. Zhu, Hao Ren","doi":"10.1117/12.300661","DOIUrl":"https://doi.org/10.1117/12.300661","url":null,"abstract":"In our experiments, we found that the adhesion of multilayer film system containing 'soft film' material of ZnS and metal Ag was evidently superior to that of multilayer film system containing 'hard film' material of SiO2 and metal Ag. Through the compared research on the interface adhesion of two film systems, we theoretically explained this 'contradictory' phenomenon. The key is the difference of interface adhesive force. The adhesive force between the Ag-ZnS interface is affected by the action of both ionic bond force of interface transition layer and image effect force. This force is bigger than the van der wall's force which is the primary source of adhesive force between the Ag-SiO2 interface. From this research, a method can provided to resolve the moisture and other problem in the thin film techniques.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115420794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interface electrical characteristics of passivation films on HgCdTe HgCdTe表面钝化膜的界面电特性
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300664
X. C. Zhang, G. Zheng, Shaoling Guo, Y. Gui, J. Chu
{"title":"Interface electrical characteristics of passivation films on HgCdTe","authors":"X. C. Zhang, G. Zheng, Shaoling Guo, Y. Gui, J. Chu","doi":"10.1117/12.300664","DOIUrl":"https://doi.org/10.1117/12.300664","url":null,"abstract":"A new passivation film: evaporated CdTe/ZnS combination film was grown on HgCdTe and the interface was characterized by capacitance-voltage (CV) characteristics of metal-insulator- semiconductor (MIS) test structures. Under proper processing conditions, the interface electrical parameters are: density of fixed charge approximately -4.0 X 1010 cm-2, density of slow state approximately 5.1 X 1010cm-2, density of fast interface state approximately 2.7 X 1011cm-2eV-1, and the time stability is good. These results show CdTe/ZnS double layer film is suitable for passivation of HgCdTe infrared detectors. We have also investigated single layer ZnS and anodic oxide/CdTe/ZnS triple layer film and found that the time stability of ZnS isn't good, and there exists too high density of fixed positive charge at the triple layer film//HgCdTe interface.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"43 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128138355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical transport properties of a diode consisting of hydrogenated nanocrystalline silicon film 氢化纳米晶硅薄膜组成的二极管的电输运特性
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300690
Ming Liu, H. Dou, Yuliang L. He, Xinliu Jiang
{"title":"Electrical transport properties of a diode consisting of hydrogenated nanocrystalline silicon film","authors":"Ming Liu, H. Dou, Yuliang L. He, Xinliu Jiang","doi":"10.1117/12.300690","DOIUrl":"https://doi.org/10.1117/12.300690","url":null,"abstract":"The diode consisting of nano-silicon quantum dots embedded in an amorphous silicon matrix is fabricated. The discontinuous staircases on its I-V curves are observed. There are two distinct regimes on I-V curves of diode: (1) the sequential tunneling regime, where current increases monotonously with increased negative bias; (2) the resonant tunneling regime, where the current increases dramatically with increased negative bias and three quantum staircases appear. The qualitative explanation of this physical phenomenon is proposed.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125400258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition 金属有机化学气相沉积法研究砷化镓衬底上InSb薄膜的结晶状态
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300673
Shu-wei Li, Y. Ning, T. Zhou, Yixin Jin, Baolin Zhang, Hong Jiang, Yuan Tian, G. Yuan, F. Jiang, Q. Yin, Bingyang Zhang
{"title":"Crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition","authors":"Shu-wei Li, Y. Ning, T. Zhou, Yixin Jin, Baolin Zhang, Hong Jiang, Yuan Tian, G. Yuan, F. Jiang, Q. Yin, Bingyang Zhang","doi":"10.1117/12.300673","DOIUrl":"https://doi.org/10.1117/12.300673","url":null,"abstract":"Plastic flows of a large lattice-mismatch InSb epilayer on GaAs substrate grown by metalorganic chemical vapor deposition (MOCVD) were first observed by scanning electron acoustic microscopy (SEAM), and crystalline state of the buried subsurfaces was discussed. From the SEAM images in two different positions a macroscopical heterogenous distribution of large compression stress fields was studied. It was a very important result to observe and study the plastic flows by SEAM uniquely imaging mechanism.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121782611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ZnS/Me heat mirror systems ZnS/Me热镜系统
Thin Film Physics and Applications Pub Date : 1996-11-30 DOI: 10.1117/12.47290
Xiao P. Zhang, Shan-qing Yu, Minwei Ma
{"title":"ZnS/Me heat mirror systems","authors":"Xiao P. Zhang, Shan-qing Yu, Minwei Ma","doi":"10.1117/12.47290","DOIUrl":"https://doi.org/10.1117/12.47290","url":null,"abstract":"The spectral selective transmission and heat conservation efficiency of some heat mirror systems consisting of ZnS/Me (Me equals Al or Ag) under a different configuration have been studied. It is shown that the 15nmZnS/20nmAg system has optimistic spectral selective transmission in visible wavelength range and the highest reflection in infrared wavelength range. Ag can keep its optical characteristic after heating to 200 degree(s)C by the protecting thick layer of ZnS. The system consisting of 15nmZnS/10nmAl is the efficiency heat mirror in the ZnS/Al systems. It is a cheaper material in application although it cannot compare with ZnS/Ag systems.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124561256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Preparation and characterization of Tl2Ba2Ca2Cu3Ox superconducting thin films Tl2Ba2Ca2Cu3Ox超导薄膜的制备与表征
Thin Film Physics and Applications Pub Date : 1994-10-26 DOI: 10.1117/12.190817
Weiang Luo, Wenqian Yang, Huan-sheng Cheng, Dequan Yue, N. Huang, X. Zong, Y. Tang, Z. Sheng, G. Salamo, F. T. Chan
{"title":"Preparation and characterization of Tl2Ba2Ca2Cu3Ox superconducting thin films","authors":"Weiang Luo, Wenqian Yang, Huan-sheng Cheng, Dequan Yue, N. Huang, X. Zong, Y. Tang, Z. Sheng, G. Salamo, F. T. Chan","doi":"10.1117/12.190817","DOIUrl":"https://doi.org/10.1117/12.190817","url":null,"abstract":"Superconducting Tl-Ba-Ca-Cu-O thin films have been fabricated by laser ablation. There are two steps in this process. First, an excimer laser is focused onto the Ba-Ca-Cu-O target forming a Ba-Ca-Cu-O plume. These particles are then deposited on substrate; second, the precursor films are placed into quartz tube to anneal in the presence of unfired Tl2Ba2Ca2Cu3O10 pellet to form the superconducting phase. Zero-resistance temperature Tc and critical current density Jc of the best film were 12 Ik and 1 X 106A/cm2 (at 77 K) respectively. X-ray diffraction (XRD) and secondary electron microscope (SEM) have been used to study the crystalline structure, while the composition are analyzed by high energy ion backscattering and checked with energy dispersion X-ray analysis (EDAX) and secondary ion mass spectroscopy (SIMS). Results show that these superconducting films are predominately composed of the (2223) phase and highly oriented. A platelet structure plays an important role on the quality of film.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126662388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interfaces in crystalline materials 晶体材料中的界面
Thin Film Physics and Applications Pub Date : 1994-10-26 DOI: 10.1117/12.190787
F. Flores, R. Saiz-Pardo, R. Rincón
{"title":"Interfaces in crystalline materials","authors":"F. Flores, R. Saiz-Pardo, R. Rincón","doi":"10.1117/12.190787","DOIUrl":"https://doi.org/10.1117/12.190787","url":null,"abstract":"A brief review of the theoretical state of the art in the field of semiconductor interfaces is presented. It is shown that the important factor controlling the different semiconductor barrier heights is the density of states associated with the semiconductor dangling-bonds. passivated semiconductor surfaces present saturated dangling-bonds and have modified barrier heights. Results for hydrogen-passivated GaAs (110)-surfaces are presented; it is shown that the Schottky-barrier height formed by the deposition of a K-layer is sustantially changed by the hydrogen-passivation.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116208415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 618
1H NMR studies of PETEOS SiO2 PETEOS SiO2的1H NMR研究
Thin Film Physics and Applications Pub Date : 1994-10-26 DOI: 10.1117/12.190800
Yihua He, Guangda Yang, H. Fan, Chun F. Xu, Xuewen Wu
{"title":"1H NMR studies of PETEOS SiO2","authors":"Yihua He, Guangda Yang, H. Fan, Chun F. Xu, Xuewen Wu","doi":"10.1117/12.190800","DOIUrl":"https://doi.org/10.1117/12.190800","url":null,"abstract":"1H NMR spectra were obtained for the Plasma-Enhanced Tetraethylorthosilicate (PETEOS) SiO2 film. The 1H spectra consisted of two components with different linewidths, being separated into a narrow Lorentzian and a broad Gaussian. The linewidths narrowed with increasing temperature.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"581 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122844589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Consequences of the microstructure of thin films on their optical properties 薄膜微观结构对其光学性能的影响
Thin Film Physics and Applications Pub Date : 1994-10-26 DOI: 10.1117/12.190737
F. Flory
{"title":"Consequences of the microstructure of thin films on their optical properties","authors":"F. Flory","doi":"10.1117/12.190737","DOIUrl":"https://doi.org/10.1117/12.190737","url":null,"abstract":"Materials in thin film form are well known to have optical properties different from corresponding bulk materials. The refractive index of films is smaller; their structure may be columnar and this induces water absorption-desorption phenomena, anisotropy and instabilities when illuminated with a high power light flux.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122970133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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