{"title":"Low-temperature preparation of diamondlike carbon film protective coatings for superconducting films","authors":"Bingkun Yu, Xintian Liu, Yongliang Chen, R. Sho","doi":"10.1117/12.300696","DOIUrl":"https://doi.org/10.1117/12.300696","url":null,"abstract":"We have studied the passivation of superconducting YBa2Cu3O7 (YBCO) films by diamond-like carbon (DLC) films using ion implantation and laser irradiation techniques. The experiment suggests that the surface layers of the YBCO films are covered by a DLC structure and critical temperature (Tc) measurements have confirmed the absence of any significant degradation after these treatments. The DLC layer successfully protects the superconducting films from environmental effect.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134127049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Infrared properties of lithium-intercalated vanadium pentoxide films","authors":"Guang-ming Wu, Yonggang Wu, Xingyuan Ni, Zhen Zhou, Hui-qing Zhang, Z.-C. Jin, Xiang Wu","doi":"10.1117/12.300708","DOIUrl":"https://doi.org/10.1117/12.300708","url":null,"abstract":"Vanadium pentoxide films were prepared by evaporation followed by annealing post-treatment in O2 atmosphere. Lithium was inserted electrochemically from an electrolyde into vanadium pentoxide films so that LixV2O5 was formed. The structure of the post-treated samples was determined by XRD and infrared reflectance was measured by FTIR for as-grown and lithiated films, respectively. The experimental results have shown that V2O5 thin films have some infrared absorption peaks located at 982, 824, 527 and 504 cm-1, and the infrared vibration bands corresponding to the peaks have a good agreement with the analysis by Abello et al. for polycrystalline V2O5, and there is an obvious influence of lithium insertion on the infrared vibration properties which may be reconciled with the lattice change such as expansion and contraction.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127700850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Two-dimensional growth and structural characterization of oxide ceramic thin films grown by laser molecular beam epitaxy","authors":"Guo‐zhen Yang, Hui‐bin Lu, D. Cui, Hui-sheng Wang, Yue-liang Zhou, Zheng-hao Chen","doi":"10.1117/12.300699","DOIUrl":"https://doi.org/10.1117/12.300699","url":null,"abstract":"Atomically regulated unit-cell by unit-cell homoepitaxial SrTiO3 (STO) and heteroepitaxial BaTiO3 (BTO) films were fabricated on STO (100) substrates by laser molecular beam epitaxy. The fine streak patterns and more than 1000 cycles undamping intensity oscillation were obtained by in situ reflection high-energy electron diffraction (RHEED). The films were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), x-ray photoelectron spectrometer (XPS), (phi) scan, and the cross-section high-resolution TEM. The root-mean-square surface roughness of the films is about 0.1 nm. The FWHM of the XRD (omega) -rocking curve for the (200) diffraction peak of BTO film is 0.235 degrees. The results indicate that the films have a high degree of c-oriented epitaxial crystalline structure and the surfaces of films are atomically smooth.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"281 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116253993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
De-quan Yang, Run-fu Wang, Shu-ping Xie, Yun Guo, Yan Sun, C. Fan, D. Da, Haijang Wang, Hu-lin Li
{"title":"N2H4 gas detection using Langmuir-Blodgett films of a dithiolene complex on chemiresistor sensors","authors":"De-quan Yang, Run-fu Wang, Shu-ping Xie, Yun Guo, Yan Sun, C. Fan, D. Da, Haijang Wang, Hu-lin Li","doi":"10.1117/12.300642","DOIUrl":"https://doi.org/10.1117/12.300642","url":null,"abstract":"A device based on a mono or multilayers films of a nickel dithiolene-stearyl alcohol complex built with the Langmuir- Blodgett (LB) technique has been investigated as a N2H4 gas detector. The films deposited on an aluminum electrode and the changes in the electrical properties of the film when exposed to the N2H4 gas were tested. It was found that there still a well response when the device exposed 0.5 ppm N2H4 gas at the room temperature, and the changes of electrical conductive of the film is roughly linear with N2H4 gas concentration in the lower concentration. The experimental results indicated the response time and recovery time of the sensor are less than 30 seconds.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"235 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122621489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xianchang He, H. Shen, Zhi-Mimg Zhang, Shenghua Li
{"title":"Diamond film improvement on WC-Co substrate by sputtering interface","authors":"Xianchang He, H. Shen, Zhi-Mimg Zhang, Shenghua Li","doi":"10.1117/12.300665","DOIUrl":"https://doi.org/10.1117/12.300665","url":null,"abstract":"To enhance the adhesion of diamond film on WC-Co substrate, interface of TiC and SiC by sputtering technique were introduced between them. The film structure and surface morphology have been checked by x-ray diffraction, Raman spectroscopy and SEM. The adhesion between both coating and substrate have been evaluated by cutting test. In addition, the vertical tensile test has been carried out to measure the adhesion strength, which indicated that the introduce of the interface layer played important effect for improvement of the film adhesion strength.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117340577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nondestructive measurement of layer thickness in double heterostructures by x-ray double crystal diffraction","authors":"Y. Qu, Xueqian Li, Xiaowei Song, Xingde Zhang, Li-ding Wang, Xiping Qie","doi":"10.1117/12.300707","DOIUrl":"https://doi.org/10.1117/12.300707","url":null,"abstract":"In this paper we introduce a method of measuring thin layer thickness using a sandwich structure of the In0.43Ga0.57As0.15P0.85/In0.13Ga0.87As0.75P0.25/In0.43Ga0.57As0.15P0.85 DH with the interference fringes in rocking curve by x-ray double-crystal diffraction.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115424727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"\"Optical matching system\" of space silicon solar cells","authors":"Weijia Zhu, Y. Xi, Zheng-hong Xi","doi":"10.1117/12.300643","DOIUrl":"https://doi.org/10.1117/12.300643","url":null,"abstract":"According to the optical electromagnetic theory, this paper demonstrates that we should not apply the usual simplified theoretical formulas of transparent dielectric (such as glass) to design semiconductor (Si) cell antireflection (AR) films. We must consider the macroscopic optical properties of semiconductor itself. We have deduced a strict formula for wide band three-layer AR coatings on semiconductor (Si) cell. By this formula, we can calculate the 'theoretical reflectance' of solar cells at any film thickness and wavelength. We have screened some type of double-layer film that increased the current gain of space solar cell effectively. For outerspace solar cells, it is necessary to have an 'optical matching system,' which is made up several layers of transparent material: AR coatings of silicon, silicon rubber adhesive and anti-radiation cover glass. For the solar cell with 'optical matching system,' we have also formulated its total reflectance Rt as a function of the reflectance Rm from AR film upon silicon, the index of refraction of cover glass ng, the index of refraction of silicon rubber adhesive nj, the transmittance of the upper surface of glass T.Rt has a parabolic type of T.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127333346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Quantum approach to vapor phase growth mechanism of diamond film","authors":"Guang-pu Wei, T. Kita, H. Hakayama, T. Nishino","doi":"10.1117/12.300730","DOIUrl":"https://doi.org/10.1117/12.300730","url":null,"abstract":"The growth mechanism of diamond films from low pressure vapor phase synthesis cannot be illustrated with classical thermodynamic theory. Up to now, a lot of growth methods were reported, but the growth mechanism was not so clear. In this paper, a variety of growth methods and growth conditions were summarized, and some tries to illustrate the growth mechanism of diamond film from the consideration of quantum mechanics bond theory were carried out. Particularly, some effects of atomic H and SP3 bond on the growth mechanism of diamond film were illustrated.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123051025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optics coatings by magnetron sputtering deposition","authors":"Mingli Wang, Z. Fan","doi":"10.1117/12.300652","DOIUrl":"https://doi.org/10.1117/12.300652","url":null,"abstract":"This paper reports the multi-layer optics films processed by magnetron sputtering, and investigated the film thickness monitor and the deposition processes control techniques systematically. And successfully makes the coatings of 0.2% reflection in the visible region.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123705506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Pyroelectric IR sensor based on oxide heterostructures on Si(100) and LaAlO3(100) substrates","authors":"N. Wu, Y. S. Chen, S. Dordevic, A. Ignatiev","doi":"10.1117/12.300682","DOIUrl":"https://doi.org/10.1117/12.300682","url":null,"abstract":"Uncooled infrared detectors consisting of thin film pyroelectric oxide heterostructures have been fabricated. Pb(Zr,Ti)O3 (PZT) and (Sr,Ba)Nb2O6 (BSN) thin films were integrated to YBa2Cu3O7-x (YBCO) films on yttria-stabilized zirconia (YSZ)-buffered Si(100) and on LaAlO3(100) substrates by the pulsed laser deposition technique. The YBCO thin films are used both as IR reflector- conductive electrodes and as atomic templates for PZT and BSN epitaxial growth, but not necessarily for their superconducting properties. The crystalline properties and photoresponse of the oxide thin film heterostructure infrared detectors were characterized from room temperature up to the phase transition temperatures of PZT and BSN. Detectivity values of approximately 108 cmHz1/2/W at room temperature have been obtained for simple heterostructure device configurations. The tunable phase transition temperature, dielectric constant and pyroelectric properties of the oxide allow for the development of an infrared detector with operation at temperatures higher than room temperature.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131021660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}