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Thin Film Physics and Applications最新文献

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Ion implantation in dielectric thin films for passive and active components 无源和有源元件介质薄膜中的离子注入
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300659
F. Flory, L. Roux, S. Tisserand, H. Rigneault, S. Robert, G. Mathieu
{"title":"Ion implantation in dielectric thin films for passive and active components","authors":"F. Flory, L. Roux, S. Tisserand, H. Rigneault, S. Robert, G. Mathieu","doi":"10.1117/12.300659","DOIUrl":"https://doi.org/10.1117/12.300659","url":null,"abstract":"The consequences of Ti implantation in silica glasses and Ta2O5 layer are studied. It is shown that the optical losses can be low with a variation of the refractive index which can be well controlled. Results on rectangular waveguides and Y junctions are given. Erbium implanted Ta2O5 layers exhibit a luminescent behavior both in the green and in the infra-red. The emission diagram of the coating can be controlled with a multilayer structure.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133300487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Porous alumina membranes obtained by sol-gel techniques 溶胶-凝胶技术制备的多孔氧化铝膜
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300676
M. Fan, Lianjun Wang, Xiuyun Sun
{"title":"Porous alumina membranes obtained by sol-gel techniques","authors":"M. Fan, Lianjun Wang, Xiuyun Sun","doi":"10.1117/12.300676","DOIUrl":"https://doi.org/10.1117/12.300676","url":null,"abstract":"Porous alumina membranes prepared by a sol-gel process, using aluminum isopropylate as precursors, were characterized by XRD, SEM, TEM, TG and DTA. It showed the mean pore diameter and the membrane thickness could reach tens of nanometers (nm), 3 micron (micrometer) respectively. The conditions of hydrolysis of aluminum isopropylate, processing sol to gel and the influences of heating on forming alumina membrane have been studied.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134570916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Luminescent Ge nanocrystallites embedded in a-SiO2 films 镶嵌在a-SiO2薄膜中的发光锗纳米晶
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300692
Zhenhong He, Kunji Chen, Jun Xu, D. Feng, Hexiang Han, Zhao-ping Wang
{"title":"Luminescent Ge nanocrystallites embedded in a-SiO2 films","authors":"Zhenhong He, Kunji Chen, Jun Xu, D. Feng, Hexiang Han, Zhao-ping Wang","doi":"10.1117/12.300692","DOIUrl":"https://doi.org/10.1117/12.300692","url":null,"abstract":"The luminescent nanocrystal Ge embedded in a-SiO2 matrix was prepared by thermal oxidation of a-Si1-xGex:H films under conventional conditions. It was found that nc-Ge were formed through the selective oxidation of Si in a-GexSi1-x:H alloys and precipitation of Ge during oxidation. The average size of nc-Ge changed from 4 nm to 6 nm with the various conditions and Ge contents. Visible photoluminescence with peak energy 2.2 eV was observed from the oxidized samples where the nc-Ge have an average size of 4 nm. In order to control the size distribution of nc-Ge, we used multilayer films of a-Si:H/a-Si1-xGex:H instead of unlayered a-Si1-xGex:H alloy films to prepare nc-Ge embedded in SiO2 matrix. We found that the size of nc-Ge in perpendicular direction can be well confined by the SiO2 sublayers simultaneously formed.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114314121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Polymerized-film replication of micro-optics elements 微光学元件的聚合膜复制
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300709
Lin Pang, Bo Chen, Lurong Guo, H. Zeng, Weijian Tian
{"title":"Polymerized-film replication of micro-optics elements","authors":"Lin Pang, Bo Chen, Lurong Guo, H. Zeng, Weijian Tian","doi":"10.1117/12.300709","DOIUrl":"https://doi.org/10.1117/12.300709","url":null,"abstract":"A new method for replicating microstructure elements is presented. The principle and technological process of the method are introduced. For one polymer, deep binary relief grating on quartz substrate is replicated by using this new method and the relief-transfer efficiency and transparency are measured. The results show that the replicas are of high fidelity of profile and are suitable for practical applications.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"400 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126671571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Voltage-tunable-color triple-layer organic light emitting diodes 电压可调色三层有机发光二极管
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300655
Zugang Liu, Chunjiu Tang, Weiming Zhao, Zhilin Zhang, Xueyin Jiang, Lin-Jun Wang, Shao-Hong Xu
{"title":"Voltage-tunable-color triple-layer organic light emitting diodes","authors":"Zugang Liu, Chunjiu Tang, Weiming Zhao, Zhilin Zhang, Xueyin Jiang, Lin-Jun Wang, Shao-Hong Xu","doi":"10.1117/12.300655","DOIUrl":"https://doi.org/10.1117/12.300655","url":null,"abstract":"Two kinds of voltage-tunable-color triple layer organic light emitting diodes consisted of styryltriphenyamine SA and 8- hydroxyquinoline aluminum chalet Alq3 or laser dye DCM doped Alq3 as emission layers and oxadizole PBD as carrier confinement layer have been fabricated. They emit both from SA and Alq3 or DCM doped Alq3 and their emission color dependent on the applied voltage. The ratios of blue from SA and green or orange-red from Alq3 or Alq3:DCM increased with the increasing of applied voltage. Brightness current characteristic has been invest9iEnergy models have been assumed and the EL behaviors are explained.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115686336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sol-gel preparation of PZT thin films with BaTiO3 seeds 溶胶-凝胶法制备BaTiO3种子PZT薄膜
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300674
A. Wu, P. Vilarinho, I. M. Miranda Salvado, J. Baptista
{"title":"Sol-gel preparation of PZT thin films with BaTiO3 seeds","authors":"A. Wu, P. Vilarinho, I. M. Miranda Salvado, J. Baptista","doi":"10.1117/12.300674","DOIUrl":"https://doi.org/10.1117/12.300674","url":null,"abstract":"The lead zirconate titanate (PZT) thin films, with Zr/Ti ratio of 52/48 have been synthesized by the sol-gel method. Perovskite barium titanate (BaTiO3) nanopowders have been introduced in the precursor sols as seeds, to induce the perovskite phase formation at low temperatures. Their effect on the phase formation process, during the crystallization of PZT thin film was studied. Pure perovskite PZT thin films were obtained at 550 degrees Celsius and 600 degrees Celsius, when 5 mole% and 1 mole% perovskite BT crystalline seeds were used, respectively.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114578318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical properties of DMACB-PEK-c polymer film DMACB-PEK-c聚合物薄膜的光学性质
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300694
Q. Ren, Zhigang Wang, Shiyi Guo, X. Mu, Xu Dong
{"title":"Optical properties of DMACB-PEK-c polymer film","authors":"Q. Ren, Zhigang Wang, Shiyi Guo, X. Mu, Xu Dong","doi":"10.1117/12.300694","DOIUrl":"https://doi.org/10.1117/12.300694","url":null,"abstract":"A new electro-optic polymer film DMACB-PEK-c has been prepared. The refractive indices of the film at 0.63- micrometer, nt and nn, are determined by the quasi- waveguide m-line method. The results of measurement and calculation are: nt equals 1.6573 plus or minus 0.0017, nn equals 1.6278 plus or minus 0.0019.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114672075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of processing conditions on PbGeTe film performance 工艺条件对PbGeTe薄膜性能的影响
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300721
Su-ying Zhang, Chiping Cheng, J. Ling, B. Fan, Ziying Zou, Zhiyun Wang, Jiajian Zhang, Tianrui Shi, Ge Wang
{"title":"Effects of processing conditions on PbGeTe film performance","authors":"Su-ying Zhang, Chiping Cheng, J. Ling, B. Fan, Ziying Zou, Zhiyun Wang, Jiajian Zhang, Tianrui Shi, Ge Wang","doi":"10.1117/12.300721","DOIUrl":"https://doi.org/10.1117/12.300721","url":null,"abstract":"Characters of PbGeTe single layer is likely affected by various factors. The adhesion of PbGeTe single layer and PbGeTe/ZnS multilayer deposited on Si substrate by PVD method is investigated by means of x-ray diffraction. The correlation of layer growing rate and the preferred orientation of Si wafer is studied by the grind angle to measure the thickness method. The particle structure of films on various surface situations is studied by the image analysis. It has been noticed, that the adhesion of PbGeTe single layer is stronger in strength than that of the PbTe single layer, which shows little correlation with the preferred orientation of the substrate. The adhesive strength of the films can be improved by inserting thin layer of Ge or oxide layer. We have found that the layer growing rate varies with the preferred orientation of the substrate, we have also noticed that the particle structure of the films can be affected by the roughness of the substrate and the polishing method. Finally, the refractive index of Pb1-xGexTe(x equals 0.08) single layer was calculated.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129397991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation and characterization of the quantum dot quantum well system CdS/CuS/CdS 量子点量子阱系统CdS/ cu /CdS的制备与表征
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300681
Hongming Chen, Xinfan Huang, Hongbin Huang, Ling Xu, Jun Xu, Kunji Chen, D. Feng
{"title":"Preparation and characterization of the quantum dot quantum well system CdS/CuS/CdS","authors":"Hongming Chen, Xinfan Huang, Hongbin Huang, Ling Xu, Jun Xu, Kunji Chen, D. Feng","doi":"10.1117/12.300681","DOIUrl":"https://doi.org/10.1117/12.300681","url":null,"abstract":"The synthesis and the characterization of the quantum dot quantum well (QDQW) system are described. The chemical synthesis and substitution method are used to synthesize the three-layered structure compound CdS/CuS/CdS which consists of a core of the CdS nanocrystal and a well of monolayers of CuS capped by monolayers of CdS acting as the outermost shell. The results of inductive coupled plasma mass spectroscopy (ICP-MS) measurement and the absorption spectra confirm the formation of the three-layered system CdS/CuS/CdS.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116095273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spiral growth pattern of high-Tc superconducting thin films by laser deposition 激光沉积高tc超导薄膜的螺旋生长模式
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300668
B. Su, Yongqing Wang, C. An, Yongchang Fan, Jing Dai, Dongshen Lu
{"title":"Spiral growth pattern of high-Tc superconducting thin films by laser deposition","authors":"B. Su, Yongqing Wang, C. An, Yongchang Fan, Jing Dai, Dongshen Lu","doi":"10.1117/12.300668","DOIUrl":"https://doi.org/10.1117/12.300668","url":null,"abstract":"In-situ laser deposition was used to fabricate YBa2Cu3O7-x superconducting films on YSZ substrates. The surface topography of YBa2Cu3O7-x thin films has been studied with both atomic force microscopy (AFM) and scanning tunneling microscopy (STM). A stepped surface is clearly observed on the mounds with a single step edge the originates from a screw dislocation at the center of the mound and moves out to the edge in a spiral fashion. The experimental result show that the spiral growth structure is an intrinsic character of superconductor films. The existence or absence of the spiral growth structure and the quality of the spiral structures may have significant implications for properties of the high temperature superconducting thin films. The new visual details may lead to improvements of YBCO films.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121420054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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