用Langmuir-Blodgett薄膜在化学电阻传感器上检测N2H4气体

De-quan Yang, Run-fu Wang, Shu-ping Xie, Yun Guo, Yan Sun, C. Fan, D. Da, Haijang Wang, Hu-lin Li
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引用次数: 2

摘要

采用Langmuir- Blodgett (LB)技术,研究了一种基于镍二硫烯-硬脂醇络合物单层或多层膜的装置作为N2H4气体探测器。测试了沉积在铝电极上的薄膜在N2H4气体作用下的电性能变化。实验发现,当器件在室温下暴露于0.5 ppm N2H4气体时,仍有良好的响应,且在较低浓度下,薄膜导电性随N2H4气体浓度的变化大致呈线性关系。实验结果表明,该传感器的响应时间和恢复时间均小于30秒。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
N2H4 gas detection using Langmuir-Blodgett films of a dithiolene complex on chemiresistor sensors
A device based on a mono or multilayers films of a nickel dithiolene-stearyl alcohol complex built with the Langmuir- Blodgett (LB) technique has been investigated as a N2H4 gas detector. The films deposited on an aluminum electrode and the changes in the electrical properties of the film when exposed to the N2H4 gas were tested. It was found that there still a well response when the device exposed 0.5 ppm N2H4 gas at the room temperature, and the changes of electrical conductive of the film is roughly linear with N2H4 gas concentration in the lower concentration. The experimental results indicated the response time and recovery time of the sensor are less than 30 seconds.
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