De-quan Yang, Run-fu Wang, Shu-ping Xie, Yun Guo, Yan Sun, C. Fan, D. Da, Haijang Wang, Hu-lin Li
{"title":"用Langmuir-Blodgett薄膜在化学电阻传感器上检测N2H4气体","authors":"De-quan Yang, Run-fu Wang, Shu-ping Xie, Yun Guo, Yan Sun, C. Fan, D. Da, Haijang Wang, Hu-lin Li","doi":"10.1117/12.300642","DOIUrl":null,"url":null,"abstract":"A device based on a mono or multilayers films of a nickel dithiolene-stearyl alcohol complex built with the Langmuir- Blodgett (LB) technique has been investigated as a N2H4 gas detector. The films deposited on an aluminum electrode and the changes in the electrical properties of the film when exposed to the N2H4 gas were tested. It was found that there still a well response when the device exposed 0.5 ppm N2H4 gas at the room temperature, and the changes of electrical conductive of the film is roughly linear with N2H4 gas concentration in the lower concentration. The experimental results indicated the response time and recovery time of the sensor are less than 30 seconds.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"235 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"N2H4 gas detection using Langmuir-Blodgett films of a dithiolene complex on chemiresistor sensors\",\"authors\":\"De-quan Yang, Run-fu Wang, Shu-ping Xie, Yun Guo, Yan Sun, C. Fan, D. Da, Haijang Wang, Hu-lin Li\",\"doi\":\"10.1117/12.300642\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A device based on a mono or multilayers films of a nickel dithiolene-stearyl alcohol complex built with the Langmuir- Blodgett (LB) technique has been investigated as a N2H4 gas detector. The films deposited on an aluminum electrode and the changes in the electrical properties of the film when exposed to the N2H4 gas were tested. It was found that there still a well response when the device exposed 0.5 ppm N2H4 gas at the room temperature, and the changes of electrical conductive of the film is roughly linear with N2H4 gas concentration in the lower concentration. The experimental results indicated the response time and recovery time of the sensor are less than 30 seconds.\",\"PeriodicalId\":362287,\"journal\":{\"name\":\"Thin Film Physics and Applications\",\"volume\":\"235 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-02-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Thin Film Physics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.300642\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.300642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
N2H4 gas detection using Langmuir-Blodgett films of a dithiolene complex on chemiresistor sensors
A device based on a mono or multilayers films of a nickel dithiolene-stearyl alcohol complex built with the Langmuir- Blodgett (LB) technique has been investigated as a N2H4 gas detector. The films deposited on an aluminum electrode and the changes in the electrical properties of the film when exposed to the N2H4 gas were tested. It was found that there still a well response when the device exposed 0.5 ppm N2H4 gas at the room temperature, and the changes of electrical conductive of the film is roughly linear with N2H4 gas concentration in the lower concentration. The experimental results indicated the response time and recovery time of the sensor are less than 30 seconds.