Gang Shi, Zhenze Sun, Geng-fu Xu, Yun-Hao Min, Jun Luo, Yo-Shan Lu, Bingzong Li, X. Qu, Gang Qian, M. Doan, E. Lee
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引用次数: 0
摘要
在本研究中，比较了两种不同的工艺，有和没有快速热退火(RTA)，对Al-Si- Cu/TiN/Ti多层接触n+扩散。在n+扩散的两个1.08 X 1.08微米2触点测试结构上进行了一系列晶圆级可靠性(WLR)测量。结果表明，RTA能显著提高接触电迁移(EM)寿命。XRD、AES和TEM分析表明，这种改善是由于TiN中的氧填充、TiN的相变和Ti - Si界面形成TiSi2所致。
Electromigration performance improvement of Al-Si-Cu/TiN/Ti/n+Si contact
In this study, two different processes, with and without rapid thermal annealing (RTA), have been compared for the Al-Si- Cu/TiN/Ti multilayer contact on n+ diffusions. A series of wafer level reliability (WLR) measurement performed on a test structure with two 1.08 X 1.08 micrometer2 contacts on n+ diffusion. The results show that RTA can increase contact electromigration (EM) lifetime dramatically. The XRD, AES and TEM analysis indicate that this improvement is attributed to oxygen stuffing in TiN, phase change of TiN and TiSi2 formation at the interface of Ti and Si.
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