LPE growth of ultrathin InGaAsP layer

Thin Film Physics and Applications Pub Date : 1998-02-20 DOI:10.1117/12.300722

B. Bo, B. Zhu, Baoshun Zhang, Xingde Zhang

引用次数: 1

Abstract

The LPE growth characteristics of ultra-thin quaternary InGaAsP alloy on GaAs substrate with different sliding speeds and various graphite growth cells has been described. The properties of grown layer are charactered by SEM, photoluminescence spectrum and x-ray diffractometer. Ten to fifty nm InGaAsP layer can be easily obtained and the FWHM of PL spectrum is about 14 mev at 10 K.

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超薄InGaAsP层的LPE生长

研究了在不同滑动速度和不同石墨生长单元的GaAs衬底上超薄季型InGaAsP合金的LPE生长特性。利用扫描电子显微镜、光致发光光谱和x射线衍射仪对生长层的性质进行了表征。可以很容易地得到10 ~ 50 nm的InGaAsP层，在10 K时PL光谱的FWHM约为14 mev。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thin Film Physics and Applications

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